Thermal oxidation of single crystalline aluminum nitride

The kinetic effect on formation of disordered intergrowth structures in mixed bismuth-layered (Bi3NbTiO9)2(Bi4Ti3O12)1 compounds

“…In the first case, see Fig. 3a, represented by solid-gas reaction in an AlN system [22,23], the structure rebuilding is realized by the interdiffusion of the composition in the grains. The change of the composition in the grains further induces the structure adjustment and leads to the movement of reactive interface from surface to interior of the grain until it reaches steady state.…”

Oxidation kinetics of aluminum nitride at different oxidizing atmosphere

“…AlN materials find large applications as electronic substrates, heat radiation fins and refractory materials [4,5]. However, these materials tend to be oxidized at high temperature under oxidizing atmosphere, which greatly limits their application.…”

“…Therefore, the study of AlN oxidation is of great interest for both fundamental science and practical applications. Several articles have reported the oxidation behavior of AlN, both in powder form and as bulk ceramic [5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Among these studies, many techniques including X-ray diffraction, infrared spectroscopy, thermogravimetric analysis, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) have been employed to study the oxidation phenomenon.…”

Annealing Effect of DC-RF Coupled Co-sputtered Boron-Aluminium Nitride Thin Films

“…), a direct band gap (E g = 5.9-6.2 eV), high level of hardness (2 x 10 3 kgf/mm 2 ), high fusion temperature (2400 °C) and a high acoustic velocity [1]- [2]. Aluminium nitride has also proven to be a very interesting electronic material in MOS technology.…”