Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

Oleksak, Richard P.; Hostetler, Eric B.; Flynn, Brendan; McGlone, John M.; Landau, Nicholas P.; Wager, John F.; Stickle, William F.; Herman, Gregory S.

doi:10.1016/j.tsf.2015.10.080

Cited by 5 publications

(2 citation statements)

References 25 publications

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“…Figure 5(a) shows the XRD patterns of Al-Ni-Fe-Gd coating at the laser power of 800 W. The coating was composed of intermetallic compounds such as AlFe, NiAl 3 and AlFe 3 . When the Ni in the low concentration, it was combined with the Al to generate the NiAl 3 , which was high hardness phase, many elements can be dissolved into the Ni–Al alloy at the same time (Oleksak et al , 2015). When the Al was combined with the Fe to generate Al–Fe alloy, it emitted a large amount of heat, which provided heat for the re–melting of solidified un–melted particles, which was contributed to improve the bonding strength of Al-Ni-Fe-Gd coating (Zhang and Chen, 2014).…”

Section: Analysis and Discussionmentioning

confidence: 99%

Effect of laser power on amorphous forming capability and corrosion performance of laser thermal sprayed Al-Ni-Fe-Gd coatings

Yan

Dejun

2018

ACMM

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Purpose The amorphous Al-Ni-Fe-Gd coatings were fabricated to improve anti-corrosion performance of offshore platforms. Design/methodology/approach The amorphous Al-Ni-Fe-Gd coatings were first fabricated on S355 steel using the laser thermal spraying. Findings The amorphous forming capability and corrosion resistance increases with the laser powers increasing. Research Limitations/implications The amorphous Al-Ni-Fe-Gd coatings were applied on S355 steel of offshore platforms to increase its long-term heavy and anti-corrosion protection. Originality/value The amorphous Al-Ni-Fe-Gd coatings were first fabricated using a laser thermal spraying, improving its anti-corrosion.

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Section: Analysis and Discussionmentioning

confidence: 99%

Effect of laser power on amorphous forming capability and corrosion performance of laser thermal sprayed Al-Ni-Fe-Gd coatings

Yan

Dejun

2018

ACMM

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“…573,574 The amorphous metal ZrCuAlNi has been shown to improve MIM device operation and yield. 507,575,576 However, the sensitivity of ZrCuAlNi to oxidation 577 has led to the development of new thin film amorphous metals such as TaWSi and TaNiSi. 578,579 Further development of amorphous metals will increase options for engineering MIM devices.…”

Section: Mim Tunnel Diodesmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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Characterizing oxidation, thickness, and composition of metallic glass thin films with combined electron probe microanalysis and X-ray photoelectron spectroscopy

Muley,

Nachlas,

Moy

et al. 2024

Applied Surface Science

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Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

Cited by 5 publications

References 25 publications

Effect of laser power on amorphous forming capability and corrosion performance of laser thermal sprayed Al-Ni-Fe-Gd coatings

Effect of laser power on amorphous forming capability and corrosion performance of laser thermal sprayed Al-Ni-Fe-Gd coatings

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Characterizing oxidation, thickness, and composition of metallic glass thin films with combined electron probe microanalysis and X-ray photoelectron spectroscopy

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