Transducers ’01 Eurosensors XV 2001
DOI: 10.1007/978-3-642-59497-7_347
|View full text |Cite
|
Sign up to set email alerts
|

Thermal Performance and Stability of Poly Si/Pt(Ni) Thin Film Temperature Sensors on GaAs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 2 publications
0
1
0
Order By: Relevance
“…In order to suppress the interfacial interactions, a thin diffusion barrier layer has to be formed on the GaAs surface before Pt and Ni deposition. An undoped, highly resistive polysilicon (poly Si) thin film has been designed and tested as a diffusion barrier layer for Pt and Ni temperature sensors on GaAs [44]. RF sputtering and electron beam evaporation (EBE) combined with a lift-off technique were used to pattern a meander-like structure of resistance temperature sensors as shown in Fig.…”
Section: Temperature Sensorsmentioning
confidence: 99%
“…In order to suppress the interfacial interactions, a thin diffusion barrier layer has to be formed on the GaAs surface before Pt and Ni deposition. An undoped, highly resistive polysilicon (poly Si) thin film has been designed and tested as a diffusion barrier layer for Pt and Ni temperature sensors on GaAs [44]. RF sputtering and electron beam evaporation (EBE) combined with a lift-off technique were used to pattern a meander-like structure of resistance temperature sensors as shown in Fig.…”
Section: Temperature Sensorsmentioning
confidence: 99%