Thermal Performance of High Power LED on Boron Doped Aluminium Nitride Thin Film Coated Copper Substrates

Ong, Zeng Yin; Shanmugan, S.; Devarajan, Mutharasu

doi:10.9734/jsrr/2015/14232

Cited by 16 publications

(4 citation statements)

References 8 publications

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“…Our team has already tested Zn thin film as TIM and observed a noticeable reduction in T J values of the LED tested (Shanmugan and Devarajan, 2020). Published research by Ong et al (2015) showed a lower value in thermal resistance and junction temperature of the tested LED package where B-AlN thin film was prepared by sputtering and used as TIM. Lim et al (2016) reported that RF sputtered copper doped aluminium oxide was used as TIM and improved the performance of high-power LED by measured low thermal resistance ( R th ) and T J .…”

Section: Introductionmentioning

confidence: 99%

CVD processed ZnO thin film as solid thermal interface material in electronic devices: thermal and optical performance of LED

Shanmugan

Devarajan²

2023

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Purpose Polymer-based thermal interface materials (TIMs) are having pump out problem and could be resolved for reliable application. Solid-based interface materials have been suggested and reported. The purpose of this paper is suggesting thin film-based TIM to sustain the light-emiting diode (LED) performance and electronic device miniaturization. Design/methodology/approach Consequently, ZnO thin film at various thicknesses was prepared by chemical vapour deposition (CVD) method and tested their thermal behaviour using thermal transient analysis as solid TIM for high-power LED. Findings Low value in total thermal resistance (Rth-tot) was observed for ZnO thin film boundary condition than bare Al boundary condition. The measured interface (ZnO thin film) resistance {(Rth-bhs) thermal resistance of the interface layer (thin film) placed between metal core printed circuit board (MCPCB) board and Al substrates} was nearly equal to Ag paste boundary condition and showed low values for ZnO film prepared at 30 min process time measured at 700 mA. The TJ value of LED mounted on ZnO thin film (prepared at 30 min.) coated Al substrates was measured to be 74.8°C. High value in junction temperature difference (ΔTJ) of about 4.7°C was noticed with 30 min processed ZnO thin film when compared with Al boundary condition. Low correlated colour temperature and high luminous flux values of tested LED were also observed with ZnO thin film boundary condition (processed at 30 min) compared with both Al substrate and Ag paste boundary condition. Originality/value Overall, 30 min CVD processed ZnO thin film would be an alternative for commercial TIM to achieve efficient thermal management. This will increase the life span of the LED as the proposed material decreases the TJ values.

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Section: Introductionmentioning

confidence: 99%

CVD processed ZnO thin film as solid thermal interface material in electronic devices: thermal and optical performance of LED

Shanmugan

Devarajan²

2023

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“…Thermally conductive ceramics from BN, BeO, AlN, SiC, MgO, Al 2 O 3 , and ZnO thin films are presently utilized as TIMs for LEDs packaging . However, magnesium oxide (MgO) possesses some features that make it suitable and dependable TIMs; these include exceptional insulation properties, stable at high temperature, thermal conductivity of above 40 W/mK, chemical inertness, (7.8 eV) bandgap, readily available, and does not require much energy during application …”

Section: Introductionmentioning

confidence: 99%

Heat transfer enhancement in light‐emitting diode packaging employing different molar concentration of magnesium oxide thin films as a heat spreader

et al. 2020

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To solve thermal management difficulties created by miniaturization of lightemitting diode package, magnesium oxide thin film was spin coated on the aluminum 5052-grade substrate and employed for heat spreading and improvement of the thermal path for heat removal from light-emitting diode parcel to ambient. Thickness of different films of magnesium oxide was prepared from 0.6M and 0.8M precursors to find out the effects of films thickness and molar concentrations towards perfect heat spreading. Results from X-ray diffraction (XRD) proves the MgO thin film as cubic with the crystalline orientations of (200), (220), and (222). Good results were highlighted through 20 layers (0.6M) MgO thin film in respect to its transient thermal analysis compared with other layers from 0.6M and 0.8M and bare Al substrate; this was due to its nonporous and evenly distributed particles size (56.0 nm), film thickness (301.7 nm), surface roughness (121 nm), higher thermal conductivity (26.3 W/ mK), and free from internal cracks and defects. Lower total thermal resistance (11.4 K/W), lower junction temperature (98.8 C), optimal thermal impedance (36.43 C), higher illumination from light-emitting diode, and operation within safe operating temperature range (2700-3000 K) for high-power light-emitting diodes were all recorded at 700 mA from the tested light-emitting diode mounted on 20 layers (0.6M) magnesium oxide thin film. This study consequently proved magnesium oxide thin film as an alternative heat spreader in lighting technology packaging.

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“…In the same year Zeng Yin Ong et al doped Boron with Al N thin film on Silicon substrate by co sputtering technique. They used various synthesis parameters such as different gas mixture ratio and substrate temperature (11). Since Al N has a variety of native defects specially oxygen related complexes Yujin Cho et al doped Si into AlN by Gas pressure sintering and investigated the effects of Si doping on the defects and luminescence (12).…”

Section: Introductionmentioning

confidence: 99%

Effect of Doping in Aluminium Nitride (AlN) Nanomaterials: A Review

Thomas

Ranjith

2022

ECS Trans.

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Piezoelectric materials can generate electrical charges when subjected to mechanical pressure through the piezoelectric effect. In addition to generating electricity from environmental vibrations, they are also used as nano energy generators for micro electro mechanical systems (MEMS). Aluminum Nitride (AlN) with a doping element exhibits unique physical and chemical properties. It is used to manufacture many electromechanical devices. They are ideal candidates for many applications, including MEMS resonators and microwave filters, due to their large piezoelectric coefficient and low resistance. A number of material properties led to its selection, including high thermal conductivity, good mechanical strength, high resistance, corrosion resistance, and the largest piezoelectric coefficient. A piezoelectric coefficient d33 characterizes the piezoelectric response of AlN thin films. By doping this material, a wide range of applications have been explored.

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Thermal Performance of High Power LED on Boron Doped Aluminium Nitride Thin Film Coated Copper Substrates

Cited by 16 publications

References 8 publications

CVD processed ZnO thin film as solid thermal interface material in electronic devices: thermal and optical performance of LED

CVD processed ZnO thin film as solid thermal interface material in electronic devices: thermal and optical performance of LED

Heat transfer enhancement in light‐emitting diode packaging employing different molar concentration of magnesium oxide thin films as a heat spreader

Effect of Doping in Aluminium Nitride (AlN) Nanomaterials: A Review

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