Thermal plasma deposition of nanostructured films

Neuman, Anastasia; Blum, J. M.; Tymiak, N. I.; Wong, Z.; Rao, Narasimha D.; Gerberich, William W.; McMurry, Peter H.; Heberlein, J.; Girshick, Steven L.

doi:10.1109/27.763025

Cited by 8 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nanoparticles were created using hypersonic plasma particle deposition (HPPD), a process described in detail elsewhere (Rao et al ., 1997, 1998; Neuman et al ., 1999; Perrey et al ., 2002b). Briefly, in HPPD vapour‐phase precursors are injected into a thermal plasma generated by a DC arc torch.…”

Section: Methodsmentioning

confidence: 99%

Using the FIB to characterize nanoparticle materials

Perrey¹,

Carter²,

Michael³

et al. 2004

Journal of Microscopy

View full text Add to dashboard Cite

SummaryIn the 1-100-nm size regime, the properties of materials can differ significantly from those of their bulk counterparts. The present study applies the focused ion beam (FIB) tool to the characterization of nanoscale structures for scanning and transmission electron microscopy. The strength of this method is its ability to manufacture samples that cannot be produced using traditional means. The films of nanoparticles examined here are examples of such systems; the films are found to be not fully dense, composed of chemically heterogeneous areas and mechanically different from the substrate. Distinct advantages of the application of the FIB for characterization of nanoscale structures are highlighted for several nanoparticle structures. This successful application of FIB techniques provides a pathway to integrate the study of nanoscale production techniques and their resulting structure-property relationships.

show abstract

Section: Methodsmentioning

confidence: 99%

Using the FIB to characterize nanoparticle materials

Perrey¹,

Carter²,

Michael³

et al. 2004

Journal of Microscopy

View full text Add to dashboard Cite

show abstract

“…Typical impact velocities are in the range 1-2 km s −1 . HPPD was first reported in 1997 [6] and has since been the subject of a number of studies [7][8][9][10][11][12][13][14] that have examined the deposition of nanoparticle films composed of various combinations of the group of elements (Si, Ti, C, N). The plasma here is generated using a dc arc torch, operating at about 200 A current and 8-10 kW power.…”

Section: Description Of the Two Approaches For Sic Film Depositionmentioning

confidence: 99%

“…The plasma here is generated using a dc arc torch, operating at about 200 A current and 8-10 kW power. For SiC synthesis [7][8][9][10]13,14]…”

Section: Description Of the Two Approaches For Sic Film Depositionmentioning

confidence: 99%

“…The plasma here is generated using a dc arc torch, operating at about 200 A current and 8-10 kW power. For SiC synthesis [7][8][9][10]13,14], SiCl 4 vapour and methane are injected into an argon-hydrogen plasma, with typical flow rates of 30-35 slm argon, 2-6 slm hydrogen, 40 sccm SiCl 4 , and methane flow rates ranging up to 15 times the SiCl 4 flow rate. Substrate temperatures have typically been in the range 750-900 • C. While the highest hardness measured for SiC nanoparticle films deposited by HPPD, 37.3 GPa [15], is well above the ∼28 GPa value for commercial SiC wafers, that result was anomalous, with more typical values lying around 22 GPa [16].…”

Section: Description Of the Two Approaches For Sic Film Depositionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal plasma synthesis of nanostructured silicon carbide films

Girshick¹,

Hafiz²

2007

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Two methods for the synthesis of nanostructured silicon carbide films are discussed and compared, thermal plasma chemical vapour deposition (TPCVD) and hypersonic plasma particle deposition (HPPD). Both methods produce β-SiC films with high growth rates on the order of 10 µm min −1. In TPCVD the generation of nanoscale grain sizes is caused by the fact that the film growth rate is much higher than the rate of surface diffusion. In HPPD a nanostructured film is grown by direct nanoparticle impact. In general, the films grown by TPCVD are denser and harder than in HPPD. X-ray diffraction spectra show that β-SiC is essentially the only crystalline phase in the TPCVD films, whereas in HPPD a silicon crystalline phase is also present, even for films that are overall carbon-rich. Evidence is presented to support the hypothesis that HPPD films actually grow by a combination of nanoparticle impact and CVD. If this parallel process can be controlled, it could potentially lead to the design and high-rate synthesis of new nanostructured materials.

show abstract

Defects and interfaces in nanoparticles

Perrey

Deneen

Carter

Springer Proceedings in Physics

View full text Add to dashboard Cite

Thermal plasma deposition of nanostructured films

Cited by 8 publications

References 3 publications

Using the FIB to characterize nanoparticle materials

Using the FIB to characterize nanoparticle materials

Thermal plasma synthesis of nanostructured silicon carbide films

Defects and interfaces in nanoparticles

Contact Info

Product

Resources

About