Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal

Otoki, Yohei; Sahara, Masahiko; Shibata, Misawo; Kuma, Shoji; Kashiwa, M.

doi:10.4028/www.scientific.net/msf.196-201.1431

Cited by 8 publications

(2 citation statements)

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“…This findings do not support results obtained from IR laser scattering tomography measurements [8,15] where the formation of As precipitates decreases with decreasing mole fraction, i.e., with increasing Ga content in the melt. Obviously, the features seen in figure 3 are not correlated with precipitates.…”

Section: Resultscontrasting

confidence: 56%

TEM investigation of precipitates in VCz GaAs crystals

Kirmse¹,

Kiessling

Häusler

et al. 2009

Cryst. Res. Technol.

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Bulk GaAs crystals were grown from various Ga-rich melts by the vapour-pressure controlled Czochralski method in order to reduce As precipitates. The correlation of the melt composition with both, structural perfection and solid composition was examined by various methods of transmission electron microscopy (TEM). From transmission electron diffraction and diffraction contrast imaging a direct correlation between melt composition and sample properties is missing. High-resolution TEM imaging hints to inhomogeneities only for the sample grown from a melt with a mole fraction of y = 0.492. Strain analysis of a selected defect reveals a strained crystal lattice in the surrounding of the defect. For the same sample, high angle annular dark-field imaging and energy dispersive X-ray spectroscopy verify the formation of precipitates. Dedicated to Prof. Wolfgang Neumann on the occasion of his 65th birthday

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Section: Resultscontrasting

confidence: 56%

TEM investigation of precipitates in VCz GaAs crystals

Kirmse¹,

Kiessling

Häusler

et al. 2009

Cryst. Res. Technol.

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“…Typical cell arrangements have been ascertained in PbTe [27], CdTe [6] and GaAs [53,54]. Therefore, three-dimensional dislocation arrangements indicate the participation of intrinsic point defects in its formation mechanisms.…”

Section: Dislocationsmentioning

confidence: 94%

Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

Rudolph

2003

Cryst. Res. Technol.

136

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An overview on the defect knowledge in IV‐VI (PbTe), II‐VI (CdTe) and III‐V (GaAs, InP) semiconductor compound crystals in dependence on non‐stoichiometric growth conditions from the melt is given. The treatment starts with the today's informations about the phase relations, i.e. the shape of the existence regions versus stoichiometry. Non‐stoichiometry related melt growth phenomena are specified. After that selected intrinsic point defects and their influence on the impurity incorporation as function of deviation from stoichiometry are discussed. The interaction processes between native point defects and dislocation formation is touched. Finally, the serious mechanisms of precipitation and inclusion incorporation are shown. Possible measures of defect minimization are mentioned.

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