Thermal properties and wavelength analysis of telecom oriented photonic-crystal VCSELs

Abstract

Results of the self-consistent comprehensive analysis of a room-temperature operation of InP-based 1300-nm AlInGaAs photonic-crystal (PhC) VCSELs are presented. In particular, an influence of PhC parameters on thermal effects within VCSEL volume and its emission wavelength are analysed. The PhC has been found to introduce a number of opposite effects including a possible light leakage through PhC holes. From one side, PhC holes make more difficult heat-flux extraction from VCSEL volume leading to higher temperature increases within it. But, from the other side, a properly manufactured PhC creates an efficient radial confinement mechanism for VCSEL radiation field. It enhances an interaction between the field and the active-region carriers leading to a decrease in both the VCSEL lasing threshold and temperature increases. Seemingly both effects may similarly affect VCSEL operation, but our analysis revealed, that thermal properties of the PhC VCSEL are mainly dependent on an efficient confinement of its radiation field within the active region impeding a mode leakage through PhC holes, whereas an importance of deterioration of heat-flux extraction from VCSEL volume is much less essential. The wavelength shift induced by a change of PhC parameters has been found not to exceed 4×10−3 µm.

Single fundamental mode photonic crystal VCSEL with high power and low threshold current optimized by modal loss analysis

“…An oxide layer with a circular aperture was located between the active layer and the top distributed Bragg reflector (DBR). [26,29,[33][34][35][36][37] The refractive index of every layer in the VCSEL structure was needed for the full 3D FDTD model, which was obtained from Refs. [38] and [39] and listed in Table 1.…”

“…For the photonic crystal structure, a moderate b/a ratio 0.5 was selected in our experiment to minimize the optical field leakage resulting from narrower air holes and the diffraction losses caused by wider air holes. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][33][34][35][36][37] The seven-point-defect and another three single-point-defect photonic crystal structures were selected and arranged in the same chip. The detailed parameters of the devices are shown in Table 2 and the scanning electron microscope images of the devices are shown in Fig.…”

Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

“…However, results obtained for high carrier concentrations in QW should be treated with some caution as there is some doubt whether such concentrations can be achieved. Although even higher carrier concentrations were reported for numerically simulated infrared VCSELs [28] (up to 1.1·10…”

GaAs/AlGaAs photonic crystals for VCSEL-type semiconductor lasers

“…Optical in− terconnection will be one major method to upgrade intercon− nect performance due to their advantageous high−speed data transfer capability in a small form factor with low crosstalk at high density. PhC VCSELs are promising light sources for optical interconnections due to very low power consumption [1][2][3] and strong discrimination of higher order modes which contributes to high−speed operation [4][5][6][7]. Furthermore, PhC VCSELs allow for high−density two−dimensional array, low crosstalk, and low production costs.…”