Thermal properties of very fast transistors

Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements

“…(3) Heat removal to wafer surface is assumed to be zero. This problem has been treated by Joy and Schlig [14]. Usually this theory is applied to calculation of thermal resistance in vertical npn BJTs.…”

Steady-state and dynamic thermal models for heat flow analysis of silicon-on-insulator MOSFETs

“…These approaches are, however, impractical for thermal simulation of devices in large-scale ICs. Several analytical transient thermal models previously presented [15,16,[47][48][49] are limited to simple geometries, such as homogeneous or semi-infinite structure, and are unable to be implemented to SOI MOSFETs because of the layer structure and interfaces in SOI devices. Recent studies of thermal modeling of SOI devices are usually based on the 1D thermal circuit with a single time constant [18,37] or heat flow models with constant channel temperature or uniform power generation in the channel [23,44], which ignore small-time-scale thermal behavior caused by the combined effects of small junction thermal capacitance and finite channel thermal resistance.…”

“…Less attention has been paid to thermal behavior in devices. Studies of self-heating or thermal behavior in devices usually treat the devices as single heat sources without temperature variation inside the devices [15][16][17][18][19][20][21].…”

Electro-Thermal Modelling of Monolithic and Hybrid Microwave and Millimeter Wave IC's

“…As it is obtained for linearised temperature, it is independent of both temperature and power, and hence independent of electrical bias point. With the non linear relation ABi = AOiiPi), (27) from the physical active device model, combination with the global thermal description, Eq. (7), gives…”