Thermal quenching has always been
one of the most difficult issues
in creating high-quality phosphor conversion light-emitting diodes
(pc-LED), and a family of strategies are urgently needed to improve
the luminescence performance of phosphors at high temperatures. In
this contribution, a novel B′-site substitution CaLaMgSb
x
Ta1–x
O6:Bi3+ phosphor was constructed using an ion substitution
strategy in the matrix with a green activator Bi3+ and
a novel double perovskite material. When Sb5+ replaces
Ta5+, a surprising increase in luminescence intensity occurs
and the thermal quenching properties are greatly improved. The shift
of the Raman characteristic peak to a smaller wavenumber and the reduction
of the Bi–O bond length confirm that the crystal field environment
around Bi3+ changes, which has a substantial effect on
the crystal field splitting and nepheline effect of Bi3+ ions, affecting the crystal field splitting energy (D
q). This results in a corresponding increase of the band
gap and the thermal quenching activation energy (ΔE) of the activator Bi3+. From the perspective of D
q, the intrinsic relationships among the activator
ion band gap, bond length, and Raman characteristic peak changes were
analyzed, and a mechanism for regulating luminescence thermal quenching
properties was constructed, which provides an effective strategy for
improving the promising new materials such as double perovskite.