Thermal quenching of defect photoluminescence and recombination rates of electron–hole pairs in a-Si:H

Ogihara, C.; Inagaki, Yoshio; Taketa, A.; Morigaki, Kazuo

doi:10.1016/j.jnoncrysol.2011.12.086

Cited by 6 publications

(8 citation statements)

References 10 publications

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“…4 are fitted by the theoretical calculation of Englman and Jortner [6] for the case of strong electron-phonon coupling, as has been reported previously for the results of the a-Si:H films of high defect density [4,5]. The theory predicts the temperature variation of P NR described by…”

Section: Discussionmentioning

confidence: 74%

“…The increase of the radiative recombination rate with increasing temperature has been attributed to thermal excitation of holes from deep tail states to shallow tail states [3]. We have also reported [4,5] that the temperature variations of the nonradiative recombination rates are fitted by the theoretical calculation of Englman and Jortner [6] for the case of strong electron-phonon coupling.…”

Section: Introductionmentioning

confidence: 64%

“…1 and 2. To estimate the nonradiative recombination rates, the radiative recombination rate at low temperature is assumed to be P R0 = (0.69 ms) -1 [4].…”

Section: Resultsmentioning

confidence: 99%

“…To estimate the absolute value of P R from (3), we assumed an appropriate value of radiative recombination rate at low temperature, P R0 , to be (0.69 ms) -1 [4]. The FRS measurements above 200 K were difficult because of the weak intensity and short lifetime.…”

Section: Methodsmentioning

confidence: 99%

“…The intensity and lifetime of the defect PL are affected by the radiative and nonradiative recombination processes competing together. We have recently reported the temperature variation of recombination rates at radiative defects [3][4][5]. The increase of the radiative recombination rate with increasing temperature has been attributed to thermal excitation of holes from deep tail states to shallow tail states [3].…”

Section: Introductionmentioning

confidence: 99%

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Preparation condition and recombination rates at radiative defects in a-Si:H

et al. 2014

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Recombination rates at radiative defects in the hydrogenated amorphous silicon films prepared at various preparation conditions, estimated from intensities and characteristic lifetimes of defect photoluminescence, have been investigated. The temperature variations of the radiative recombination rate are discussed in terms of a model in which the increase of the radiative recombination rate is attributed to the thermal excitation of the holes from deep and strongly localised tail states to shallow and more extended tail states. The temperature variations of nonradiative recombination rate are discussed in terms of a theory for the case of strong electron-phonon coupling. PACS Nos.: 71.55.Jv, 78.55.Qr, 81.05.Gc. Résumé :Nous étudions les taux de recombinaison aux sites de défauts radiatifs dans des films de silicium amorphe hydrogené, préparés sous différentes conditions, que nous estimons à partir des intensités et des temps de vie caractéristiques de la photoluminescence issue des défauts. Les variations en température du taux de recombinaison radiative sont analysées en fonction d'un modèle dans lequel l'augmentation du taux de recombinaison radiative est attribuée à l'excitation thermique de trous d'états de queue de bande profonds et fortement localisés vers des états de queue de bande peu profonds et étendus. Les variations en température du taux de recombinaison non radiative sont analysées dans le cadre d'une théorie pour un fort couplage électron-phonon. [Traduit par la Rédaction]

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Section: Discussionmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 64%

“…1 and 2. To estimate the nonradiative recombination rates, the radiative recombination rate at low temperature is assumed to be P R0 = (0.69 ms) -1 [4].…”

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Preparation condition and recombination rates at radiative defects in a-Si:H

et al. 2014

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Electronic and Optical Properties of Amorphous Silicon

2016

Amorphous Semiconductors

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Suppression of the thermal quenching of photoluminescence in irradiated silicon heterojunction solar cells

Plantevin

Defresne

Cabarrocas

2016

Physica Status Solidi (a)

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We report on the decrease in photoluminescence (PL) intensity with the increase of the sample temperature (thermal quenching) in crystalline silicon and its suppression after ion irradiation. The crystalline silicon surface was passivated with intrinsic and doped hydrogenated amorphous silicon (a-Si:H) layer stacks as for making silicon heterojunction solar cell precursors. Low energy argon ion irradiation, in the range between 5 and 17 keV, was used for controlled defect formation either in the thin a-Si:H top layer or at the interface with the crystalline silicon beneath. The irradiation defects introduce radiative recombination centers in the a-Si:H as can be measured from PL at low temperature. Moreover, the irradiation and annealing result in a strong modification of the thermal quenching of the PL intensity up to 500 K, showing evidence for the strong reduction of thermally activated nonradiative recombinations at the amorphous-crystalline interface. This result can have implications in the field of crystalline silicon surface passivation.

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Thermal quenching of defect photoluminescence and recombination rates of electron–hole pairs in a-Si:H

Cited by 6 publications

References 10 publications

Preparation condition and recombination rates at radiative defects in a-Si:H

Preparation condition and recombination rates at radiative defects in a-Si:H

Electronic and Optical Properties of Amorphous Silicon

Suppression of the thermal quenching of photoluminescence in irradiated silicon heterojunction solar cells

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