Thermal ratchetting effect of AMB-AlN ceramic substrate: Experiments and calculations

Zhang, Shanshan; Yan, Luchun; Gao, Kewei; Yang, Huisheng; Yang, Lihang; Wang, Yanbin; Wan, Xiaoling

doi:10.1016/j.ceramint.2019.04.186

Cited by 24 publications

(6 citation statements)

References 26 publications

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“…The green compact was placed in a graphite resistance furnace and nitrided at a heating rate of 2 The bulk density was measured according to the Archimedes principle with water displacement. Relative densities were calculated through dividing the measured bulk densities by a theoretical density (3.23 g/cm 3 ). The Xray diffraction (XRD) pattern of the specimens before and after PS procedure was recorded by an XRD (SmartLab, Rigaku, Tokyo, Japan) with Cu K α (λ = 1.5406 Å) radiation.…”

Section: Methodsmentioning

confidence: 99%

“…In addition, because those substrates are generally joined with metal plates for circuit formation (the front side) and for improving efficiency of the heat dispersion (the back side), large thermal stresses are generated in the metalized ceramic substrates. 3,4 Generally, silicon nitride (Si 3 N 4 ) and aluminum nitride (AlN) are used as the substrates for high output power modules because of their high thermal conductivities. Miyazaki et al 4 evaluated the mechanical reliability of Si 3 N 4 , and AlN substrates joined with copper under thermal cycling from −40 to 250 • C. Si 3 N 4 substrates joined with copper were not broken, even after 1000 cycles, which demonstrated that the reliability was superior to AlN ones joined with copper that did exhibit detachment after only 7 cycles.…”

Section: Introductionmentioning

confidence: 99%

“…For such a purpose, ceramic insulating substrates with high thermal conductivity are required. In addition, because those substrates are generally joined with metal plates for circuit formation (the front side) and for improving efficiency of the heat dispersion (the back side), large thermal stresses are generated in the metalized ceramic substrates 3,4 . Generally, silicon nitride (Si 3 N 4 ) and aluminum nitride (AlN) are used as the substrates for high output power modules because of their high thermal conductivities.…”

Section: Introductionmentioning

confidence: 99%

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Effect of microstructures on dielectric breakdown strength of sintered reaction‐bonded silicon nitride ceramics

et al. 2022

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Silicon nitride (Si3N4) was prepared from silicon by a sintered reaction‐bonded silicon nitride method using yttria and magnesia as sintering additives. Post‐sintering (PS) of nitrided compacts was carried out at 1850°C under a nitrogen pressure of 1 MPa. Effect of PS time on microstructure and dielectric breakdown strength (DBS) of the prepared Si3N4 ceramics was evaluated. The DBS was measured using specimens with four different thicknesses (0.30, 0.20, 0.10, and 0.05 mm) in order to examine the thickness dependence. The porosity of the sintered Si3N4 decreased by prolonging the PS time, and the full density could be achieved at the PS time of over 6 h. After full densification, rod‐like β‐Si3N4 grains grew up, and their maximum grain size increased from 45.1 to 154.7 μm by prolonging the PS time from 6 to 48 h. The DBS of the thick Si3N4 substrates (0.30 mm) showed little variation from 35.4 to 47.0 kV/mm, regardless of the PS time. On the other hand, that of the thin ones (0.05 mm) dramatically decreased from 99.5 to 9.8 kV/mm with increased the PS time from 6 to 48 h. Because the DBS sharply decreased at the thin substrate sintered for longer time in which some large‐elongated grains might span the substrate thickness‐wise throughout, it was inferred that the interface between β‐Si3N4 grains and grain boundary phase/intergranular glassy films might be a path of the dielectric breakdown.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of microstructures on dielectric breakdown strength of sintered reaction‐bonded silicon nitride ceramics

et al. 2022

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“…Ceramic printed circuit boards (PCBs) and ceramic semiconductor packages are crucial components of many modern electronic devices. They are widely used in fabrication of sensors [1][2][3] and are almost a non-alternative option for production of high-power IGBT modules, MOSFET devices, state-of-the-art radiofrequency, and microwave integrated circuits [4][5][6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Cu Metallization of Al2O3 Ceramic by Coating Deposition from Cooled- and Hot-Target Magnetrons

et al. 2023

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We examined the feasibility of alumina substrate metallization by magnetron deposition of copper coatings with thickness of several tens µm for its prospective applications in production of ceramic PCBs and packaging. The films were prepared in magnetron sputtering systems with cooled and thermally insulated (hot) targets. Substrates with different geometries were used, including those with through-holes. Thickness, adhesive properties, and electrical resistivity of produced coatings were analyzed. If the film thickness exceeded ~20 µm, we observed its systematic delamination, unless the dedicated CuxOy sub-layer of was introduced between the substrate and the main Cu film. Intermediate copper oxide films were investigated separately by SEM, EDS, and XRD methods, and deposition conditions for predominant growth of favorable tenorite CuO were determined. Prepared composite two-layer CuO + Cu coatings with total thickness of ~100 µm demonstrated good adhesion to alumina substrates in scratch-testing and performed much better than Cu-only films both in soldering and thermal cycling tests. We discuss an approach for constructing a reliable metallizing coating by plasma-assisted PVD methods that could be beneficial for complex-shaped ceramic PCBs and packaging.

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“…Furthermore, the mismatch between the CTE of AlN and the metal layers leads to development of thermal stresses at the ceramic/metal interface after cooling the joint from the highbonding temperature to room temperature [11]. Two methods are applied to join copper to AlN ceramic, termed as direct-bond copper (DBC) and active-metal bonding (AMB) [12,13].…”

Section: Introductionmentioning

confidence: 99%

Interfacial strength and microstructure of AlN/Cu joints produced by a novel brazing method facilitated by porous copper layer and Ag foil

Huang

Chen

et al. 2021

J Mater Sci: Mater Electron

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The reliability of wide-bandgap (WBG) semiconductors used as power electronics is closely related to the high thermal conductivity of AlN-metalized substrates. Thus, the bonding of AlN ceramics with metals is a key issue for the production of reliable AlN-metalized substrates. This paper reports on a new method for producing AlN/Cu joints by employing a novel lm-metallization production process, which involves a porous network of Cu layer and Ag foil. The microstructure and the phases formed at the interface of the AlN/Cu joints produced at various brazing temperatures and times, were analyzed by scanning electron microscopy and X-ray diffraction analysis. Strong joints with shear strength of 48.5 MPa were produced after brazing at 850 °C for 10 min. The typical microstructure at the interfacial reaction zone was Cu / Ag(s) + Cu(s) / CuAlO 2 + Al 2 O 3 + Cu(s) / AlN. The experimental results manifest the crucial role of the Ag-Cu eutectic liquid phase, formed by the reaction between the Cu layer and the Ag foil, and of the porous network of the Cu layer deposited on the surface of the AlN ceramic substrate, since both of them effectively favor the reduction of the residual thermal stresses in the joint and result in strong ceramic/metal joins.

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Thermal ratchetting effect of AMB-AlN ceramic substrate: Experiments and calculations

Cited by 24 publications

References 26 publications

Effect of microstructures on dielectric breakdown strength of sintered reaction‐bonded silicon nitride ceramics

Effect of microstructures on dielectric breakdown strength of sintered reaction‐bonded silicon nitride ceramics

Cu Metallization of Al2O3 Ceramic by Coating Deposition from Cooled- and Hot-Target Magnetrons

Interfacial strength and microstructure of AlN/Cu joints produced by a novel brazing method facilitated by porous copper layer and Ag foil

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