Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors

Tsai, Chun-Wei; Lee, Ching-Ting

doi:10.1007/s11664-001-0100-5

Cited by 7 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Cu and Au metals are commonly used in microelectronic technologies. For example, Cu has excellent thermal and electrical conductivities, and may be used as metal in Schottky diode and in metal-semiconductor-metal photodetectors [1]. There are many theoretical and experimental studies of stress evolution during deposition of thin films [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Study of Structure and Strain in Au/Cu Systems Using Molecular Dynamics Simulation: X-Ray Scattering Analysis

Chocyk

Zientarski

2013

SSP

View full text Add to dashboard Cite

The aim of this work is to investigate structure and stress evolution in Au/Cu bilayer systems during deposition. The approach used here is based on an embedded atom method (EAM). interatomic potential database for different metal elements, their alloys and multilayers. We applied the kinematical scattering theory to calculate the X-ray scattering profiles. In this case the X-ray scattering techniques are used for the structural characterization of crystal structures obtained from simulation data. This method was applied to determine the lattice parameters in any directions. The lattice parameters in deposited layers were directly determined by the analysis of X-ray diffraction profiles. Results shows that on the interface of Au/Cu system, the crystalline lattice of Au layer is fitted to crystalline lattice of Cu layer. We found that deformation of the crystal lattice near the interface has a major influence on the stress.

show abstract

Section: Introductionmentioning

confidence: 99%

Study of Structure and Strain in Au/Cu Systems Using Molecular Dynamics Simulation: X-Ray Scattering Analysis

Chocyk

Zientarski

2013

SSP

View full text Add to dashboard Cite

show abstract

Effect of annealing on the mechanical behaviour of Au/Cu and Cu/Au bilayers on silicon

Chocyk¹,

Prószyński²,

Gładyszewski³

2010

Cryst. Res. Technol.

View full text Add to dashboard Cite

The realtime evolution of stress during deposition of Cu/Au and Au/Cu bilayers was studied by an in-situ curvature measurement optical technique and annealing in the temperature range from room temperature to 400 °C. The Au/Cu and Cu/Au bilayers attached to silicon substrate with total thickness equal 12 nm and individual film thicknesses equal 6 nm Cu and 6 nm Au; 4 nm Cu and 8 nm Au; and 8 nm Cu and 4 nm Au, respectively, were examined. During deposition, an increase in tensile stress with increasing the total thickness of a system for both Au/Cu and Cu/Au bilayers were observed. Deposition of Au layer on Cu layer resulted in a change in compressive direction, whereas no change was observed for Cu deposition on Au. This difference is explained by lattice parameter mismatch. Significant stress evolution during the first cycle of heating was observed for all samples. It was found that irreversible modifications occur in systems during the first cycle of annealing. A change in the slope of the elastic part of stress curve during heating indicates a change in the coefficient of thermal expansion of metallic layers.

show abstract

Diffusion barrier of sputtered W film for Cu Schottky contacts on InGaP layer

2004

View full text Add to dashboard Cite

Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors

Cited by 7 publications

References 16 publications

Study of Structure and Strain in Au/Cu Systems Using Molecular Dynamics Simulation: X-Ray Scattering Analysis

Study of Structure and Strain in Au/Cu Systems Using Molecular Dynamics Simulation: X-Ray Scattering Analysis

Effect of annealing on the mechanical behaviour of Au/Cu and Cu/Au bilayers on silicon

Diffusion barrier of sputtered W film for Cu Schottky contacts on InGaP layer

Contact Info

Product

Resources

About