2016
DOI: 10.1016/j.solener.2016.05.058
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Thermal residual stresses in silicon thin film solar cells under operational cyclic thermal loading: A finite element analysis

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Cited by 16 publications
(4 citation statements)
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“…Residual stress within the film is detrimental to the performance and stability of the device. , To analyze residual strain, we employed the grazing incidence X-ray diffraction (GIXRD) technique with various grazing incident angles ω. , With ω increasing, the peak of the control perovskite film moved sequentially in the low-angle direction (Figure k,l). Subsequently, we calculated the lattice spacing d , and observed obvious changes in d for the control film (Figure m), indicating the presence of non-negligible tensile stress within the perovskite film.…”
mentioning
confidence: 99%
“…Residual stress within the film is detrimental to the performance and stability of the device. , To analyze residual strain, we employed the grazing incidence X-ray diffraction (GIXRD) technique with various grazing incident angles ω. , With ω increasing, the peak of the control perovskite film moved sequentially in the low-angle direction (Figure k,l). Subsequently, we calculated the lattice spacing d , and observed obvious changes in d for the control film (Figure m), indicating the presence of non-negligible tensile stress within the perovskite film.…”
mentioning
confidence: 99%
“…[27,28] It is reported that the residual strain may come from external stimuli during PSCs preparation and the mismatch of thermal expansion coefficient at buried interface (TiO 2 /perovskite film). [29][30][31] To investigate the residual strain present in perovskite films on both TiO 2 and TiO 2 -CSBA, we employed depth-resolved grazing incidence X-ray diffraction (GIXRD) technology. [32,33] As exhibited in Figure 3d,e, by varying 𝜔 (the grazing incidence angle) from 0.5°to 1.3°, the scattering peaks of (100) plane in TiO 2perovskite film gradually shift toward a smaller angle.…”
Section: Strain Relaxation Of Perovskite Filmmentioning
confidence: 99%
“…[ 71 ] The second reason is the internal stress resulting from the differences in lattice structures of different materials. [ 70 ] To further enhance the efficiency of FCSs, it is imperative to find a way to release residual stress.…”
Section: Residual Stress In Flexible Devicesmentioning
confidence: 99%
“…The current conversion efficiency of FCSs is still lower than the theoretical limit. The main reasons are generally attributed to 1) the intrinsic properties of flexible substrate materials, such as diffusion of harmful impurities and substrate stability; 2) the internal stress in flexible devices; [ 70,71 ] 3) the high density of defects in the CZTSSe films; [ 31,72–79 ] and 4) the carrier recombination at the interface. [ 80–82 ] In this article, we focus on the earlier problems and introduce the corresponding solutions to explore feasible strategies for the fabrication of high‐efficient flexible CZTSSe devices.…”
Section: Introductionmentioning
confidence: 99%