Thermal Resistance Extraction of Power Transistors using Electric Field Simulation

Zhu, Yu; Cai, Qi; Gerber, J.

doi:10.1109/euma.2001.339186

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2008

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“…To achieve power on the order of watts, the general way is to connect many HBT unit cells in parallel. However, the thermal effect is more serious in HBTs than that in silicon BJTs, particularly in multi-finger HBTs [1]. A different form of current crowding, named thermal runaway or hot spot occurs when the parallel cells do not have identical heat sinks [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Novel ballast resistor network for power amplifier design

Gao

Wang

Xue³

et al. 2008

Micro & Optical Tech Letters

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Abstract-A novel ballast resistor network is proposed to achieve a better thermal management in HBT power cells without degrading the RF performances. Experiments were conducted on two HBT power amplifiers. They occupy same area. One was designed using conventional ballast network. The other uses proposed novel network. Temperature comparisons were made based on the same current density. Infrared camera images show that a more uniform temperature distribution is obtained in novel ballast network power amplifier. Our results demonstrate that the proposed novel ballast network has promising applications in high power amplifiers.

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Section: Introductionmentioning

confidence: 99%