2019 IEEE International Workshop on Integrated Power Packaging (IWIPP) 2019
DOI: 10.1109/iwipp.2019.8799085
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Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters

Abstract: The temperature distribution in a Silicon Carbide (SiC) MOSFET during a destructive short-circuit is simulated using a custom 1D-finite difference model implemented using Matlab. Some of the main assumptions usually put forward in the literature dealing with this kind of simulations are tested in this paper. We show that some of those simplifications (model of the heat source, die top-side boundary conditions, etc.), sometime in-spite of common sense, have a great impact on the simulated temperature.

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Cited by 7 publications
(4 citation statements)
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“…Note this one greatly exceeds 1000K after 10µs. Such a temperature level is in agreement with recent publications using the same modelling approach but on different chips' size [16] or considering a different VDS bias [17].…”
Section: First Validation Of the Electro-thermal Modelsupporting
confidence: 91%
See 1 more Smart Citation
“…Note this one greatly exceeds 1000K after 10µs. Such a temperature level is in agreement with recent publications using the same modelling approach but on different chips' size [16] or considering a different VDS bias [17].…”
Section: First Validation Of the Electro-thermal Modelsupporting
confidence: 91%
“…4 show that it allows to simulate by a quasi-plateau corresponding to the quantity of latent energy to be dissipated in order to produce the Al layer phase change. [16] recently proposed the same modelling approach based on our work by including a sensitivity study to the physical parameters. Concerning the circuit-based electro-thermal modelling of the DUT, these curves are fitted by a Cauer's line of 8 elements with constant parameters to easily allow an integration in PLECS™.…”
Section: = ∫ −∞ (6)mentioning
confidence: 99%
“…Based on the results of TCAD simulations in this section we propose a simple thermal model that reproduces the real temperature dependence of I D and provides the hot spot temperature (T max ) inside the device. Due to the fast dynamic of the SC event, the device can be considered an adiabatic system where the heat transfer is strongly constrained in the first layers of the structure, not involving the case and the environment [26]. This consideration allows us to derive a simple thermal model with a single time constant.…”
Section: Proposed Modelmentioning
confidence: 99%
“…The physical density, thermal conductivity, and specific heat of SiC material are listed as (1) (3) [17]. The thermal properties of the other materials are summarized in Table I [18]. Table II provides the mechanical properties of the materials [19].…”
Section: Approach and Simulation Modelmentioning
confidence: 99%