2013
DOI: 10.1016/j.actamat.2013.04.043
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Thermal stability of Al1−xInxN (0001) throughout the compositional range as investigated during in situ thermal annealing in a scanning transmission electron microscope

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Cited by 14 publications
(20 citation statements)
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“…3c (blue line) shows a shift of the E p value to ~18.1 eV (from original ~17.6 eV) inside the layers, which indicates a loss of In from the InAlN layers. It was previously shown that In can desorb through the surfaces of a thin TEM foil during high-temperature heating21, which the present cross-section sample symmetry would allow. Finally, the top and bottom In 0.72 Al 0.28 N layers are seen to have the same average E p as the other layers in the as-grown sample, while for the heated sample, these layers loose more In compared to the adjacent.…”
Section: Resultsmentioning
confidence: 68%
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“…3c (blue line) shows a shift of the E p value to ~18.1 eV (from original ~17.6 eV) inside the layers, which indicates a loss of In from the InAlN layers. It was previously shown that In can desorb through the surfaces of a thin TEM foil during high-temperature heating21, which the present cross-section sample symmetry would allow. Finally, the top and bottom In 0.72 Al 0.28 N layers are seen to have the same average E p as the other layers in the as-grown sample, while for the heated sample, these layers loose more In compared to the adjacent.…”
Section: Resultsmentioning
confidence: 68%
“…Hence, eventually there is no driving force for further decomposition after a prolonged heating cycle. The reduced In content domains are also expected to be stable at the present temperatures, as the thermal stability of InAlN is increased with increasing Al content 21 . Thus, the final product is a porous skeletal structure which does not evolve further, as seen in the STEM-HAADF images of the fully heated samples.…”
Section: Resultsmentioning
confidence: 91%
“…During growth, −30 V dc substrate bias was applied. Y x In 1−x N films were grown at a relatively low temperature of T s = 300 • C to avoid desorption of In from the surface of Y x In 1−x N [36,37]. AlN(0 0 0 1) buffer layer was deposited at T s = 900 • C in pure N 2 atmosphere.…”
Section: Methodsmentioning
confidence: 99%
“…The morphology of the as-grown samples were characterized by a LEO-1550 field-emission scanning electron microscopy (FE-SEM). Analyses of structural properties and compositional profiles were performed by θ/2θ XRD scan using a Philips 1820 Bragg-Bretano diffractometer as well as scanning transmission electron microscopy (STEM) and energy dispersive x-ray spectroscopy (EDX) using a FEI Tecnai G 2 TF 20 UT 200 kV FEG microscope [18,19].…”
mentioning
confidence: 99%