Thermal stability of amorphous and crystalline multilayers produced by magnetron sputtering

Beke, D.L.; Langer, G. A.; Kis-Varga, M.; Dudas, Alan; Nemes, Péter; Daróczi, Lajos; Kerekes, Gy.; Erdélyi, Zoltán

doi:10.1016/s0042-207x(98)00069-4

Cited by 25 publications

(9 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such coatings are reckoned to be cathodic ones and can fulfil their task, provided they are tight and apart their own chemical stability may physically prevent penetration of the aggressive solution on the substrate. In addition the coatings developed in the PVD processes feature the effective diffusion and thermal barriers [17,18]. Coatings containing Mo, Zr, and their compounds have the especially advantageous properties at high temperatures [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Corrosion resistance of multilayer coatings deposited by PVD techniques onto the brass substrate

Dobrzański

Lukaszkowicz

Zarychta

et al. 2005

Journal of Materials Processing Technology

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Corrosion resistance of multilayer coatings deposited by PVD techniques onto the brass substrate

Dobrzański

Lukaszkowicz

Zarychta

et al. 2005

Journal of Materials Processing Technology

View full text Add to dashboard Cite

“…[3][4][5] Thus, for example factors controlling the details of diffusional homogenization in amorphous Si/Ge multilayers are still under discussion. First of all the diffusional asymmetry ͑manifested in the strong concentration dependence of the interdiffusion coefficients͒, 6 the significant pore formation during the diffusional mixing, 7 and the possible role of diffusional stresses 8 are the most important factors indicating the need of a better understanding of the previous process.…”

mentioning

confidence: 99%

“…Good quality amorphous Si/Ge multilayers, as was checked by transmission electron microscope, were prepared by dc magnetron sputtering 6 from elemental targets onto ͑001͒ silicon wafers. The modulation wavelength was designed to range from 10 to 20 nm with nearly equal thickness of sublayers, which were monitored in situ using vibrating quartz crystal method.…”

mentioning

confidence: 99%

Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

Csík

Langer

Beke

et al. 2001

Journal of Applied Physics

View full text Add to dashboard Cite

It has been shown by the Auger depth profiling technique that the concentration profile at the initially sharp Si/Ge interface in amorphous Si/Ge multilayers shifted but remained still sharp after a heat treatment at 680 K for 100 h. At the same time the fast diffusion of Si resulted in the formation of an almost homogeneous Ge͑Si͒ amorphous solid solution, while there was practically no diffusion of Ge into the Si layer. This is direct evidence on the strong concentration dependence of the interdiffusion coefficient in amorphous Si/Ge system, and it is in accordance with the previous indirect result obtained from the measurements of the decay of the small angle Bragg peaks, as well as with finite difference simulations. © 2001 American Institute of Physics. ͓DOI: 10.1063/1.1331330͔Changes in atomic structures of amorphous semiconductors and their relationships to physical properties are currently of interest due to their useful optical and electronic features.1,2 Since most structural changes are related to atomic diffusion, any real understanding of the structural transformation, homogenization, etc., must be based on the knowledge of the diffusion processes. The study of diffusion in amorphous materials includes some difficulties. One of the main problems is related to the thermal stability of the amorphous phase; the diffusional measurements should be carried out at low temperatures for very short diffusion times in order to avoid structural changes due, e.g., to structural relaxation. Additionally, in amorphous semiconductors the mechanism of diffusion is also not fully understood.3-5 Thus, for example factors controlling the details of diffusional homogenization in amorphous Si/Ge multilayers are still under discussion. First of all the diffusional asymmetry ͑manifested in the strong concentration dependence of the interdiffusion coefficients͒, 6 the significant pore formation during the diffusional mixing, 7 and the possible role of diffusional stresses 8 are the most important factors indicating the need of a better understanding of the previous process.In this article interdiffusion in amorphous Si-Ge multilayered specimens is studied by Auger depth profiling. The primary objective of the present investigation is to observe the predicted asymmetric change of composition caused by the strong concentration dependence of the diffusion coefficients. Experimental results, obtained from small angle x-ray diffraction ͑SAXRD͒ measurements at different average compositions indicated a strong concentration dependence of the chemical diffusion parameters.9,10 Although such a strong concentration dependence inevitably should lead to a significant curvature on the ln(I/I 0 ) ͑I/I 0 is the normalized height of the first order SAXRD peak͒ versus time plots 11 ͑and to oscillatory behavior of the higher order peaks͒, later on the experimentally observed curvature was rather attributed by the same group to the effects of structural relaxation and coupling back effects of stresses of diffusional origin were also excluded....

show abstract

“…A Co layer (thickness, 50 nm) was deposited on to polished Al 2 O 3 (0001) substrates by dc magnetron sputtering (Beke et al 1998). During the sputtering the working pressure of the high-purity (99.999%) Ar was 5 £ 10 ¡3 mbar; the thickness of deposited layer was monitored by a quartz microbalance.…”

Section: Usion From a Metal Source: Secondary-ion Mass Spectrometrmentioning

confidence: 99%

Solubility and diffusion of cobalt in alumina

Gontier-Moya¹,

Erdélyi

Moya³

et al. 2001

Philosophical Magazine A

View full text Add to dashboard Cite

Di usion of Co in alumina was carried out between 1403 and 1873 K in air with or without the presence of a spinel phase. The penetration pro®les were obtained by the secondary-ion mass spectrometry (SIMS) technique and at the highest temperature by tracer measurement. The Arrhenius relationdescribes the temperature dependence of the di usion coe cient obtained by both methods. The formation of the spinel phase CoAl2O4 was observed when the experiments were carried out at temperatures lower than 1673 K. The formation of the spinel phase o ered a good opportunity to calibrate the SIMS signal and the solubility of Co in alumina was found to be about (2 4 † £ 10 ¡3 metal atom fraction in the temperature range 1403±1623 K.

show abstract

Thermal stability of amorphous and crystalline multilayers produced by magnetron sputtering

Cited by 25 publications

References 11 publications

Corrosion resistance of multilayer coatings deposited by PVD techniques onto the brass substrate

Corrosion resistance of multilayer coatings deposited by PVD techniques onto the brass substrate

Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

Solubility and diffusion of cobalt in alumina

Contact Info

Product

Resources

About