Thermal stability of Cu/α-Ta/SiO2/Si structures

Yuan, Z.L.; Zhang, D.H.; Li, C.Y.; Prasad, K.; Tan, Cher Ming

doi:10.1016/j.tsf.2004.05.057

Cited by 20 publications

(7 citation statements)

References 15 publications

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“…1, for as-deposited samples, the sheet resistance are very low. For the specimens after less than 600 • C RTA, the sheet resistance just slightly decreased, this may be due to the reduction of crystal defects and grain growth in the Cu thin-films (Yuan et al, 2004), while for Cu/Si sample, the sheet resistance increased abruptly after 200 • C RTA, which means that Cu had already reacted with silicon and formed Cu silicon compounds at this temperature. After RTA at 600 • C, the sheet resistance of Cu/Ta/Si samples increased, while the other samples still keep stable.…”

Section: Resultsmentioning

confidence: 95%

Fabrication and diffusion barrier properties of nanoscale Ta/Ta-N bi-layer

Zhou

Huang

2009

Journal of Materials Processing Technology

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Section: Resultsmentioning

confidence: 95%

Fabrication and diffusion barrier properties of nanoscale Ta/Ta-N bi-layer

Zhou

Huang

2009

Journal of Materials Processing Technology

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“…19 The oxidation potential provides a sufficient and persistent driving force for pulling Cu through weak spots in the sidewall barrier, enabling other thermodynamic potentials across the barrier. 24,25 In the Cu/porous low-k damascene structure with a SiCO / Ta bilayer sidewall barrier, the oxygen content in the SiCO layer and porous low-k IMD may exhibit similar behavior; oxygen would be released and contributes to the oxidation-driven Cu outdiffusion phenomenon during the long-time thermal stress. The loss of Cu by outdiffusion induces extensive voiding and subsequent failure in Cu interconnects.…”

Section: E Effects Of Oxygen Content In Cu/porous Ultralow-k Intercomentioning

confidence: 99%

Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu∕porous ultralow-k interconnects

Chen

Prasad

Jiang

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Dielectric/metal bilayer diffusion barriers with different silicon carbide films ͑SiCO, SiCN, and SiC͒ were fabricated for use in Cu/porous low-k damascene interconnects. The bilayer sidewall barriers show significant performance improvements in terms of breakdown strength and leakage current characteristics compared with conventional physical vapor deposited metal barriers. SiC / Ta and SiCN / Ta bilayer barriers are good candidates for use in Cu/porous low-k damascene interconnects due to their superior electrical performance even after long-time thermal/electrical stress. However, the electrical characteristics of SiCO / Ta bilayer barrier showed a significant degradation after long-time thermal/electrical stress. This divergence may be attributed to the influence of the underlying dielectric layer on Ta texture in the bilayer barrier structure. The preferred ␣-phase Ta barrier was formed when deposited on SiCN or SiC, but the ␤-phase Ta was formed when deposited on SiCO or directly on porous low-k dielectric. The unstable oxygen content in porous low-k dielectric as well as the SiCO layer are likely to be responsible for the electrical degradation of the interconnects.

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“…It is well known that copper is a faster diffuser in Si and SiO 2 , which makes diffusion barrier layer so important in Cu metallization [1][2]. Thetantalum (Ta) and tantalum nitride (TaN) [3] barrier layers have been widely used as diffusion barriers and thin film resistors in the microelectronics industry due to their good diffusion barrier properties [1,4,5] and relatively stable electrical properties [6][7][8]. TiN have also received much attention as diffusion barrier [9][10][11] due to its mechanical stability [9,12] and low resistivity [10,11].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characteristics of the Reactive Sputtered Ta-N Thin Films with Ti Addition

Chung¹

2018

J Nanosci Adv Tech

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The combination of TaN and TiN is expected to create a range of muti-functional materials because of the composition dependent resistivity and thermal coefficient of resistance for the applications in microelectronics and thermal sensors industry. In this article, adding Ti into the TaN thin film has been investigated by various sputtering conditions to create the possibility with varied electrical property which can be good for resistor and sensor application. A series of TaN (0Ti%) and Ta-TiN thin films were deposited by DC magnetron sputtering. The microstructure, composition, morphology and electrical properties of the films were characterized using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy, scanning electron microscopy and four point probe method. The crystal structures of Ta, Ti and Ta-Ti alloys are based on bcc α-Ta and bcc β-Ti. XRD patterns showed TaN is qusi-amorphous structure with high N 2 flow ratio of 20% while Ta-TiN is preferred to form polycrystalline phase. The resistivity of both kinds of thin films decreases with increasing temperatures for the nature of negative temperature coefficient of resistance (N-TCR). The magnitude of both resistivity and N-TCR increases with increasing N 2 flow ratio. The wide range of resistivity and TCR can be used for applications in thermally based micro sensors (high TCR)and thin-film resistor (low TCR).

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Thermal stability of Cu/α-Ta/SiO2/Si structures

Cited by 20 publications

References 15 publications

Fabrication and diffusion barrier properties of nanoscale Ta/Ta-N bi-layer

Fabrication and diffusion barrier properties of nanoscale Ta/Ta-N bi-layer

Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu∕porous ultralow-k interconnects

Fabrication and Characteristics of the Reactive Sputtered Ta-N Thin Films with Ti Addition

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