Thermal stability of current gain in InGaP∕GaAsSb∕GaAs double-heterojunction bipolar transistors

Abstract

The thermal stability of current gain in InGaP∕GaAsSb∕GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP∕GaAsSb∕GaAs DHBTs is nearly independent of the substrate temperature at collector current densities >10A∕cm2, indicating that the InGaP∕GaAsSb∕GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP∕GaAsSb∕GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs.

Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors

“…2,3 This instability often manifests itself in the collector current through either thermal runaway or current collapse. Here they apply this method to high power SiGe heterojunction bipolar transistors ͑HBTs͒ integrated in a commercial SiGe bipolar complementary metal-oxide-semiconductor platform, measuring the current carried by each subcell and quantifying current collapse under high-bias operation.…”