Thermal Stability of Ge/GeSn Nanostructures Grown by MBE on (001) Si/Ge Virtual Wafers

Sadofyev, Yu. G.; Martovitsky, V. P.; Klekovkin, A. V.; Saraikin, V. V.; Васильевский, И. С.

doi:10.1016/j.phpro.2015.09.078

Cited by 9 publications

(4 citation statements)

References 10 publications

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“…Growth of GeSn on Ge is difficult due to low solubility (<1%) of Sn in Ge and the instability of α-Sn above 13 °C. In order to grow GeSn material, growth techniques were developed under non-equilibrium growth conditions such as low temperature growth via either MBE [10][11][12][13][14][15][16] , or CVD [17][18][19][20][21][22][23][24] . The CVD growth of GeSn has been investigated over a decade.…”

Section: Introductionmentioning

confidence: 99%

UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices

Grant¹,

Dou

Alharthi

et al. 2019

Opt. Mater. Express

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The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrared Si photonics. For chemical vapor deposition of GeSn, the exploration of parameter window is difficult from the beginning due to its non-equilibrium growth condition. In this work, we demonstrated the effective pathway to achieve the high quality GeSn with high Sn incorporation. The GeSn films were grown on Ge-buffered Si via ultra-high vacuum chemical vapor deposition using GeH4 and SnCl4 as precursor gasses. The influence of both SnCl4 flow fraction and growth temperature on the Sn incorporation and material quality were investigated. The key to achieve effective Sn incorporation and high material quality is to explore the proper parameter match between SnCl4 supply and growth temperature, which is also called optimized growth regime. The Sn precipitation is significantly suppressed in optimized growth regime, leading to more Sn incorporation into Ge and enhanced material quality. The prototype GeSn photoconductors were fabricated with typical samples, showing the promising devices applications towards mid-infrared optoelectronics.

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Section: Introductionmentioning

confidence: 99%

UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices

Grant¹,

Dou

Alharthi

et al. 2019

Opt. Mater. Express

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“…For practical applications in optoelectronic and electric devices, the thermal stability of Ge 1−x Sn x material is a crucial property which has been widely studied and reported [17,23,24,[41][42][43][44][45]. Zaumseil et al showed that the tin segregation temperature of Ge 1−x Sn x alloys increases with decreasing Sn content, and that Ge 0.91 Sn 0.09 was stable at temperatures up to 400°C [17].…”

Section: Resultsmentioning

confidence: 99%

Facile synthesis of Ge_1−xSn_x nanowires

Al-Salim

Lim

et al. 2020

Mater. Res. Express

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We report a facile one-pot solution phase synthesis of one-dimensional Ge 1−x Sn x nanowires. These nanowires were synthesized in situ via a solution-liquid-solid (SLS) approach in which triphenylchlorogermane was reduced by sodium borohydride in the presence of tin nanoparticle seeds. Straight Ge 1−x Sn x nanowires were obtained with an average diameter of 60±20 nm and an approximate aspect ratio of 100. Energy-dispersive x-ray spectroscopy (EDX) and powder x-ray diffraction (PXRD) analysis revealed that tin was homogeneously incorporated within the germanium lattices at levels up to 10 at%, resulting in a measured lattice constant of 0.5742 nm. The crystal structure and growth orientation of the nanowires were investigated using high-resolution transmission electron microscopy (HRTEM). The nanowires adopted a face-centred-cubic structure with individual wires exhibiting growth along either the 〈111〉, 〈110〉 or 〈112〉 directions, in common with other group IV nanowires. Growth in the 〈112〉 direction was found to be accompanied by longitudinal planar twin defects.

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“…Germanium is used as the p + source, since it exhibits a lower bandgap as compared to Silicon, and since Germanium is a potential candidate for digital applications that produce high electron and hole density, resulting in enhanced drive current [40]. In addition, the Germanium device is less immune to thermal cracking even at high temperatures indicating that Ge is a low thermal stability material [41]. The channel region and the n + drain region employ Silicon to retain a low leakage current.…”

Section: Device Structure and Simulation Methodologymentioning

confidence: 99%

Study of effect of oxide thickness variation on electrical parameters and high frequency characteristics induced by work-function variation for delta-doped germanium-source vertical TFET

Vanlalawmpuia

Saha

Bhowmick

2020

Semicond. Sci. Technol.

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In this paper, we use a 3D technology computer-aided design device simulator to conduct an investigation into the impact on oxide thickness variation, based on parameters, such as threshold voltage (σV TH ), subthreshold swing (σSS), on current (σI ON ), off current (σI OFF ), current ratio σ(I ON /I OFF ), transconductance (σg m ), total gate capacitance (σC gg ), and cut-off frequency (σf T ), induced by Titanium nitride (TiN) metal gate/high-κ stack work-function variability (WFV) in a delta-doped layer Germanium-source vertical tunnel field-effect transistor (vTFET). We note that WFV has a substantial impact on electrical parameters as well as high frequency characteristics, in relation to gate insulator thickness variation. The distribution of V TH is nearly Gaussian for smaller metal grain sizes, whereas it appears bi-modal for larger grain sizes. However, the average effect has an insignificant impact on the WFV-induced threshold-voltage variation for vTFET architectures.

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Thermal Stability of Ge/GeSn Nanostructures Grown by MBE on (001) Si/Ge Virtual Wafers

Cited by 9 publications

References 10 publications

UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices

UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices

Facile synthesis of Ge_1−xSn_x nanowires

Study of effect of oxide thickness variation on electrical parameters and high frequency characteristics induced by work-function variation for delta-doped germanium-source vertical TFET

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Thermal Stability of Ge/GeSn Nanostructures Grown by MBE on (001) Si/Ge Virtual Wafers

Cited by 9 publications

References 10 publications

UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

Facile synthesis of Ge1−xSnx nanowires

Study of effect of oxide thickness variation on electrical parameters and high frequency characteristics induced by work-function variation for delta-doped germanium-source vertical TFET

Contact Info

Product

Resources

About

UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices

UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices

Facile synthesis of Ge_1−xSn_x nanowires