Thermal Stability of Indium Tin Oxide/n-GaAs Heterostructures with and without Sulfur Passivation

Abstract

Thermally evaporated ITO/n-GaAs contacts with and without sulfur passivation are studied. It is determined that passivation improves the thermal stability (up to 700 C annealing temperature) of contacts. This improvement is due to formation of thermally stable S±S, S±As, and S±Ga bonds at GaAs surface layer.

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

“…Thus, the nonideal behavior, caused by the interfacial-layer thickness, may be described by an increase of the n value with increasing oxide thickness. [19][20][21][22][23][24][25] The reverse-bias current does not become independent of the oxide thicknesses, as in Fig. 1.…”

“…It is well known that the presence of an interfacial layer causes the effective barrier height to decrease with increasing bias so that the reverse current does not saturate. [19][20][21][22][23][24][25] Furthermore, as can be seen in Table I, the ideality-factor value for the Cu/n-GaAs SBDs (sample CuG3) with the interfacial layer ranges from 1.32-1.42. The values of n indicate that the device obeys a metal-interface layer-semiconductor (MIS) configuration rather than ideal Schottky diode.…”

“…The values of n indicate that the device obeys a metal-interface layer-semiconductor (MIS) configuration rather than ideal Schottky diode. 11,12,[17][18][19][20][21][22][23][24][25][26] is the laterally homogeneous barrier height. Figure 2 shows high-frequency (HF) C-V characteristics for sample CuG3 at 100 kHz.…”

“…3 Using the difference between the barrier-height values of samples CuG1 (the control sample) and CuG3 (the MIS sample) in Eq. 6, we obtained a value of 10.90 for the electron-tunneling factor, a␦() 1/2 , and 0.265 eV -1/2 Å Ϫ1 for a ϭ (4/h)(2m*) 1/2 , where m* ϭ 3.82 ϫ 10 Ϫ13 eV-s 2 /m 2 and h ϭ 4.135 ϫ 10 Ϫ15 eV-s. Now, let us calculate the interfacial-layer thickness, ␦, for the MIS diode from HF C-V characteristics using the equation C ox ϭ ε i ε o A/␦, where C ox is the capacitance of the interfacial-oxide layer, and ε i Ϸ 4 21,22 and ε o are the permitivities of the interfacial layer and free space. The accumulation region of the HF C-V characteristic of sample CuG3 in Fig.…”

The temperature induced current transport characteristics in the orthoferrite YbFeO3− δ thin film/p-type Si structure

“…As mentioned above, it is seen from figure 9 that the BH Φ (0, T) decreases linearly with temperature because of the presence of YbFeO 3−δ interfacial thin layer at metal and p-Si interface [117][118][119][120][121][122]. Some researchers [117][118][119][120][121][122] have experimentally determined an effective BH presented by the thin interfacial layer and the transmission coefficient of sufficiently energetic incident charge carriers crossing the interfacial layer/inorganic semiconductor interface. We have also obtained a linear forward bias Φ(0, T) versus temperature plot fitted to Φ (0, T) = 0.0023T − 0.011 eV for the Al/YbFeO 3−δ /p-Si/Al structure in figure 9.…”