Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O

Park, Changyu; Lee, Changmin; Lee, Woohui; Lee, Jehoon; Kim, Jin–Yong; Eom, Deokjoon; Oh, Joo-Hee; Lee, Sung-Hae; Kim, Hyoungsub

doi:10.1016/j.ceramint.2021.08.038

Cited by 3 publications

(4 citation statements)

References 40 publications

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“…The XRD profile also shows a clear presence of EuSi 2 , as indicated by the EuSi 2 (004) peak located at 28.53°, confirming that either Si or Eu ions, or both, diffuse across the thin MgO buffer layer, which may have led to the formation of EuSi 2 near the interface. The diffusion of Si across the monolayer thick MgO buffer layer is not an unreasonable observation as the process of Si diffusion from the substrate into MgO thin films (6 nm thick) has been shown, in Park et al, to begin at temperatures as low as 500 °C and is well established at temperatures near 700 °C. The diffusion of Eu across the MgO buffer layer cannot be ruled out, although it is not as likely due to the lack of a direct driving force during the synthesis procedure.…”

Section: Resultsmentioning

confidence: 99%

Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅

Shah

Annaorazov

Rimal

et al. 2023

ACS Appl. Mater. Interfaces

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Utilizing pulsed laser deposition, a film of EuO 1−x was deposited onto a Si(001) substrate with MgO buffer and compared to the same heterostructure with an additional BaTi 2 O 5 thin film on top of the EuO 1−x surface. X-ray diffraction (XRD) indicates the films crystallize into a preferred EuO(111) orientation; it also reveals the clear presence of EuSi 2, which suggests Si or Eu diffuses across the MgO buffer layer. EuO 1−x films exhibit a ferromagnetic (FM) signature and temperature-dependent exchange bias, indicated by MOKE measurements, suggesting the presence of a magnetic order well above the EuO Curie temperature with possible origins in charge carrier density near the interface. In comparison, an antiferromagnetic character persists well above the EuO Curie temperature of 69 K and the enhanced Curie temperature of 150 K for BaTi 2 O 5 films grown on the EuO 1−x films. The antiferromagnetic behavior is not seen in thicker EuO 1−x thin films when integrated with other ferroelectric (FE) phases of the BaO−TiO 2 system, suggesting an origin in the perturbed charge population at the BaTi 2 O 5 /EuO 1−x interface.

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Section: Resultsmentioning

confidence: 99%

Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅

Shah

Annaorazov

Rimal

et al. 2023

ACS Appl. Mater. Interfaces

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“…Φ B shifts were also plotted against several other parameters, including the parent metal valence, film stoichiometry (i.e., atomic ratios), oxide fixed charge (estimated from measured MOSCAP V fb ), and conduction and valence band edge positions below the vacuum level (data not shown). The band edge positions were determined from literature electron affinity and band gap data. − No correlations were observed in any of these cases. Thus, of the parameters investigated, the estimated OAD provides the most accurate prediction of the change in Φ B when high-κ oxides are added to a Si/SiO x /Ni stack.…”

Section: Resultsmentioning

confidence: 99%

Dependence of the Metal–Insulator–Semiconductor Schottky Barrier Height on Insulator Composition

Davis,

Strandwitz

2024

ACS Appl. Electron. Mater.

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The effects of different high-κ tunnel oxides on the metal−insulator−semiconductor Schottky barrier height (Φ B ) were systematically investigated. While these high-κ interlayers have been previously observed to affect Φ B , there has never been a clear consensus as to why this Φ B modulation occurs. Changes in Φ B were measured when adding 0.5 nm of seven different high-κ oxides to n-Si/Ni contacts with a thin native silicon oxide also present. Depending on the high-κ oxide composition and Φ B measurement technique, increases in Φ B up to 0.4 eV and decreases up to 0.2 eV with a high-κ introduction were measured. The results were compared to several different hypotheses regarding the effects of tunnel oxides on Φ B . The experimental data correlated most closely with the model of a dipole formed at the SiO x /high-κ interface due to the difference in the oxygen areal density between the two oxides. Knowledge of this relationship will aid in the design of Schottky and ohmic contacts by providing criteria to predict the effects of different oxide stacks on Φ B .

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“…The TiN electrode and MgO thin films have a crystalline cubic phase, unlike the Al 2 O 3 thin film. ALD-grown MgO thin films crystallize easily to the cubic phase at normal ALD process temperatures. − Enhanced crystallization is typically observed when thin films are grown on crystalline materials because of the coherence of crystallinity between the two materials. As shown in Figure (a) and (b), although annealing was performed to improve the crystallinity of the ZrO 2 thin film, the ZrO 2 thin film grown on Al 2 O 3 exhibited relatively degraded crystallinity.…”

Section: Resultsmentioning

confidence: 99%

“…Unlike ZrO 2 , a transition metal oxide, MgO is an alkaline earth metal-based oxide and can passivate the TiN surface during ZrO 2 ALD by preventing oxygen diffusion. Additionally, MgO has a higher dielectric constant (∼10) than Al 2 O 3 (∼8), and crystalline MgO thin films can be obtained relatively easily at typical ALD temperatures. − In particular, the degradation of ZrO 2 crystallinity can be prevented because of the low lattice constant mismatch with tetragonal ZrO 2 .…”

Section: Introductionmentioning

confidence: 99%

Suppressing Interfacial Layer Formation in ZrO₂-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier

Lee,

Seol,

Nam

et al. 2024

ACS Appl. Electron. Mater.

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The TiO x N y interfacial layer formed by an O3 reactant during the atomic layer deposition (ALD) of ZrO2 on a TiN electrode is a challenge to further scaling dynamic random-access memory (DRAM). This interfacial layer degrades the electrical properties and reliability of metal–insulator–metal (MIM) capacitors because of its high defect density. In this paper, we reveal the results of introducing a MgO oxygen diffusion barrier to suppress the formation of a TiO x N y interfacial layer during the O3-based ALD of ZrO2. The MgO thin film inserted at the ZrO2/TiN interface effectively prevented oxygen diffusion into the TiN bottom electrode (BE) via O3 during ALD of ZrO2. Therefore, the formation of the TiO x N y interfacial layer due to oxidation of the TiN BE was suppressed during ZrO2 ALD, and tetragonal ZrO2 was grown without deteriorating the crystallinity owing to the low lattice constant mismatch between MgO and tetragonal ZrO2. Thus, the degradation of the electrical properties due to the trap sites in the dielectric was mitigated without notable deterioration in the dielectric properties of ZrO2. In particular, the leakage current characteristics were significantly improved when MgO was inserted, and a minimum equivalent oxide thickness of 0.79 nm was achieved while satisfying the specification of the DRAM leakage current density (<10–7 A/cm2 at an applied voltage of +0.8 V).

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Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O

Cited by 3 publications

References 40 publications

Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅

Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅

Dependence of the Metal–Insulator–Semiconductor Schottky Barrier Height on Insulator Composition

Suppressing Interfacial Layer Formation in ZrO₂-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier

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Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O

Cited by 3 publications

References 40 publications

Controlling the Magneto-Optical Response in Ultrathin Films of EuO1–xvia Interface Engineering with Ferroelectric BaTi2O5

Controlling the Magneto-Optical Response in Ultrathin Films of EuO1–xvia Interface Engineering with Ferroelectric BaTi2O5

Dependence of the Metal–Insulator–Semiconductor Schottky Barrier Height on Insulator Composition

Suppressing Interfacial Layer Formation in ZrO2-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier

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Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅

Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅

Suppressing Interfacial Layer Formation in ZrO₂-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier