Thermal Stability of Silicon Carbide Power Diodes

Abstract

Silicon carbide (SiC) power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC devices can operate without a good cooling system. To demonstrate this, the model of a Merged PiN Schottky (MPS) SiC diode is presented, and its parameters are identified with experimental measurements. This model is then used to study the ruggedness of the diode regarding the thermal run-away phenomenon. Finally, it is shown that where a purely unipolar diode would be unstable, the MPS structure brings increased stability.

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

“…The simulations show that the maximum temperature is obtained at or near the Schottky contact, along the path of the incident ion. For normal incidence, the size of the volume where the temperature exceeds the melting temperature of SiC ( ) [22] is estimated to be about across and along the track. The location for the maximum peak SiC lattice temperature is reached few nanometers below the Schottky junction and it is reached at about after the ion strike.…”

Вольт-Амперные Характеристики Диодов Шоттки При Больших Плотностях Тока В Условиях Инжекции Неосновных Носителей

“…Протекание прямого тока через JBS-структуру в пер-вом приближении может быть описано как параллельное соединение ДШ и p−n-перехода [11]. При больших плотностях тока вольт-амперные характеристики как ДШ, так и p−n-перехода должны быть рассчитаны с учетом эффектов, выявленных и описанных недавно для p−n-переходов [12,13].…”

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

“…However, this not only affects the reverse characteristics, but also modifies the device thermal behavior at forward bias [4]. In contrast with SBD's, whose positive temperature coefficient is dictated by the series resistance [5], JBS thermal behavior is predominated by the bipolar junction, which turns the overall temperature coefficient to negative [4].…”

“…However, this not only affects the reverse characteristics, but also modifies the device thermal behavior at forward bias [4]. In contrast with SBD's, whose positive temperature coefficient is dictated by the series resistance [5], JBS thermal behavior is predominated by the bipolar junction, which turns the overall temperature coefficient to negative [4]. Notice that both structures present Schottky and bipolar contacts parallel connected, whose current density balance is dictated by the device temperature [4], which could cause destructive local self-heating effects, especially in high temperature applications [6,7].…”