Thermal stability of thin hexagonal boron nitride grown by MOVPE on epigraphene

Ottapilakkal, Vishnu; Juyal, A.; Vuong, Phuong; Mballo, Adama; Beck, L.; Nunn, Grant; Su, Yuyu; Loiseau, Annick; Fossard, F.; Mérot, Jean-Sébastien; Chapron, D.; Kauffmann, T.H.; Salvestrini, Jean-Paul; Voss, Paul L.; Heer, Walt A. de; Berger, Claire; Ougazzaden, A.

doi:10.1016/j.jcrysgro.2022.127030

Cited by 6 publications

(7 citation statements)

References 31 publications

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“…BN is also chemically inert 12 , its biocompatibility has enabled recent studies for its applications in biotechnology [13][14][15][16] . ermally, BN is stable 17 and conductive [18][19][20][21] which further improves its versatility. e less-ordered a-BN is a promising ultra-low dielectric material that can, given its mechanical properties, also act as a diffusion barrier.…”

Section: Properties and Applications Of Sp 2 -Boron Nitridementioning

confidence: 95%

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Phase Evolution of Boron Nitride and Carbide during Chemical Vapor Deposition

Sharma

2024

Linköping Studies in Science and Technology. Dissertations

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in films of Boron Nitride (BN) and Boron Carbide (BC) possess properties that make them attractive for various applications. Epitaxially grown BN exhibits potential for optoelectronic devices, as piezoelectric materials, and graphene technology. Epitaxial BC is a semiconductor that could allow bandgap tuning and has potential applications in thermoelectric and optoelectronic devices. Both BN xi

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Section: Properties and Applications Of Sp 2 -Boron Nitridementioning

confidence: 95%

“…ere are many reports of graphene-h-BN heterostructures and heteroepitaxial growth. 17,[30][31][32][33][34] One dissimilarity that h-BN has compared with graphene is its structural symmetry. Graphene has identical atoms in its structure, while h-BN does not.…”

Section: Properties and Applications Of Sp 2 -Boron Nitridementioning

confidence: 99%

Phase Evolution of Boron Nitride and Carbide during Chemical Vapor Deposition

Sharma

2024

Linköping Studies in Science and Technology. Dissertations

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“…Boron nitride is found to be ideal for graphene and other 2D semiconductors [65]. Accordingly, recent Georgia Tech directed work has demonstrated the growth of high-quality BN on epigraphene, using metalorganic vapor phase epitaxy (MOVPE) [66,67].…”

Section: Stage (Iii) At 1600 C In 1 Bar Ar Produces Up To 1mmentioning

confidence: 99%

“…Current work focuses on reliably producing macroscopic terraces [45] producing viable dielectrics that do not severely reduce the mobility [46,47], managing the Schottky barriers, and developing schemes to produce integrated circuits.…”

Section: Conclusion and Perspectivementioning

confidence: 99%

Ultrahigh mobility semiconducting epitaxial graphene on silicon carbide

Heer

Zhao

et al. 2023

Preprint

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Epigraphene, which is graphene that is epitaxially grown on a single crystal silicon carbide (SiC) substrate, was proposed as a path to extend Moore’s roadmap beyond silicon at the beginning of the millennium. Despite considerable progress, the lack of a bandgap in graphene and steps on the substrate continued to be roadblocks. Here we show a new method to produce millimeter scale step-free terraces covered with a graphene-like interface that is bonded to the SiC surface. This so-called buffer layer is found to be two-dimensional semiconducting epigraphene (SEG) with a 0.6 eV bandgap and a room temperature mobility exceeding 4000 cm2V-1s-1, which surpasses all current 2D single layer semiconductors by a factor of 10. A top-gated SEG field-effect transistor demonstrates an on-to-off ratio of 104 which is suitable for digital electronics. In addition, we also find that hydrogen intercalation converts SEG into a high-mobility semi-metallic epigraphene monolayer that can be seamlessly integrated with SEG. Centimeter scale mean free paths are observed in the epigraphene edge state of this quasi-freestanding monolayer, which is by a factor of 1000, the largest room temperature electronic mean free path observed in any material.

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“…Boron precursors include boron hydrides, like diborane (B2H6) [21][22][23] , or organoboranes, like triethylborane B(C2H5)3 (TEB), and trimethylborane B(CH3)3 (TMB). Numerous reports in the literature 16,24,25 show that temperatures around 1500 °C are required for epitaxial growth of h-BN and r-BN, limiting the substrates that can be used in thermal CVD. Sapphire (Al2O3) 22,[26][27][28] and silicon carbide (SiC) 19,29,30 are the two most common substrates.…”

mentioning

confidence: 99%

The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layers

Sharma,

Palisaitis,

Ivanov

et al. 2023

Preprint

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Boron nitride (BN) is a promising two-dimensional material as well as a potential wide-bandgap semiconductor. Chemical vapor deposition (CVD) is commonly used to deposit single layers or thin films of BN, but the deposition process is insufficiently understood at an atomic scale. We study the CVD of BN using two boron precursors, the organoboranes, triethylborane and trimethylborane. Using high resolution (scanning) transmission electron microscopy and electron energy loss spectroscopy we show that hexagonal-BN (h-BN) nucleates and grows epitaxially for ~4 nm before it either polytype transforms to rhombohedral-BN (r-BN), turns to less ordered turbostratic-BN or is terminated by a layer of amorphous carbon. We propose that the carbon in the organoboranes deposits on the epitaxially growing h-BN surface and this either leads to the polytype transition to r-BN, the transition to less ordered BN growth or complete surface poisoning with carbon terminating BN growth. Our results question the use of organoboranes in CVD of epitaxial BN films, and the polytype stability of h-BN growing on graphene.

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Thermal stability of thin hexagonal boron nitride grown by MOVPE on epigraphene

Cited by 6 publications

References 31 publications

Phase Evolution of Boron Nitride and Carbide during Chemical Vapor Deposition

Phase Evolution of Boron Nitride and Carbide during Chemical Vapor Deposition

Ultrahigh mobility semiconducting epitaxial graphene on silicon carbide

The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layers

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