Thermal stability of Ti/Pt/Au ohmic contacts on InAs/graded InGaAs layers

Lee, Ching-Ting; Jaw, Kou Liang; Tsai, Chang Da

doi:10.1016/s0038-1101(98)00086-0

Cited by 15 publications

(6 citation statements)

References 20 publications

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“…TLM patterns were performed using standard photolithography and lift-off techniques. 19 The grown samples were first cleaned with chemical solutions of trichloroethylene, acetone, and methanol. Then the samples were rinsed with deionized (DI) water and immediately blown dry with N 2 .…”

Section: Methodsmentioning

confidence: 99%

Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Lin

Lee

Hwang

et al. 2001

Journal of Elec Materi

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Ohmic contacts to n-type GaN with low contact resistance were developed by (NH 4 ) 2 S x and KOH+(NH 4 ) 2 S x surface treatments prior to Ti/Al metal deposition. The lowest specific contact resistance of 3.0 × 10 -6 Ω-cm 2 was obtained for Ti/Al contacts in an (NH 4 ) 2 S x -treated GaN layer alloyed at 300°C for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH 4 ) 2 S x treatment conditions for both (NH 4 ) 2 S x and KOH+(NH 4 ) 2 S x -treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

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Section: Methodsmentioning

confidence: 99%

Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Lin

Lee

Hwang

et al. 2001

Journal of Elec Materi

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“…This is similar to the thermal degradation of a device at temperatures higher than 220 'C. Thermal degradation has been reported on non-alloyed ohmic contacts (such as the devices from chapter 3) on an InGaAs layer [33]. Indium has been found to leave the top InGaAs layer causing the contact resistance to increase.…”

Section: Mechanisms In Tlms and Hemtssupporting

confidence: 69%

Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors

Mertens

Alamo²

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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InAlAs/InGaAs metamorphic High Electron Mobility Transistors (HEMT) hold promise for power-millimeter wave applications. A major reliability concern in some of these devices is the degradation of the drain resistance that is observed when the device is electrically stressed for a long time at bias conditions necessary for power applications. The goal of this thesis was to find the physical origin of this reliability problem and to suggest solutions to it. State-of-the-art InAlAs/InGaAs metamorphic HEMTs, provided by our sponsor, Hewlett Packard, were stressed under different bias schemes. It was found that most figures of merit associated with the drain-side of the device degrade under severe bias stress. In particular, the drain resistance, RD, has been found to increase significantly. In order to understand the physical origin of this degradation, we have studied the degradation of simpler Transmission Line Model (TLM) structures. We have found that in TLMs and HEMTs there appear to be two different degradation modes, both associated with hot electrons. In the first degradation mechanisms, we postulate that hot electrons are trapped by defects at the interface between the GaAs etch-stopper and the AlInAs Schottky barrier layer, depleting the carrier concentration in the channel underneath. In the second mechanism hot electrons degrade the InGaAs ohmic contacts. No degradation mechanism associated with the metamorphic nature of the structure has been identified. AcknowledgementsI would like to thank Prof. Jesus del Alamo for giving me the chance to work on this interesting project. He has guided me through this research with a huge amount of patience, ideas and red ink, teaching me a methodology in research and reporting. He always tried to make time available for me, even if he was extremely busy. I would like to thank him for offering me the opportunity to be a teaching assistant for his very interesting class and for giving me a place at MIT from the time I arrived. This research has been funded by Hewlett-Packard. I would like to thank Don D'Avanzo for starting this project, appropriating the funding and giving me the opportunity to work as a SEED student in Santa Rosa. Larry Studebaker, thanks for the invaluable help and the samples during the year and the supervision this Summer. I am very happy that I have found such a great co-advisor. I had a great time in Santa Rosa and I learned a lot there, also thanks to Dan Scherrer, Fred Sughiwo and Bob Yeats. HP Labs also helped me a lot through this thesis. Hans Rohdin, thank you for answering so many questions, reading this thesis on time and sending me the samples that helped pull things together. Thanks to Arlene Wakita and Nick Moll for making these devices available to me.Roxann Blanchard, thanks for all the discussions we held and the questions you answered, even when you were busy with your own thesis. You have proven to be an infinite well of knowledge and I can only hope I have been able to soak up enough of it to continue this research.Tassan...

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“…27 assuming each SBH. [27][28][29][30][31] As described in the previous section, the values with the STLM have a variation where some points are out of the error range of values evaluated using the MSTLM. On the other hand, the value evaluated using the MSTLM has small variations thanks to the elimination of contact resistance, R mc , which is sensitive to the surface oxides of Ni-InAs, 6,7) and statistical evaluation, which mitigates the sample variations.…”

Section: Discussionmentioning

confidence: 88%

Accurate evaluation of specific contact resistivity between InAs/Ni–InAs alloy using a multi-sidewall transmission line method

Sumita

Kato

Takeyasu

et al. 2020

Jpn. J. Appl. Phys.

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A Ni-InAs source/drain nMOSFET is a promising future logic device. However, the specific contact resistivity, ρ int , between InAs and Ni-InAs is difficult to evaluate accurately because of the complex junction structure. In this study, we develop a multi-sidewall transmission line method (MSTLM) for the measurement of low contact resistivity with high accuracy. The MSTLM enables us to simplify the junction interface structure in terms of the resistance analysis, to eliminate the effects of the contact metal and to perform statistical analyses to mitigate sample variations. The high accuracy of measurement of ρ int is demonstrated by combining InAs-on-insulator (InAs-OI) substrates with the MSTLM. The evaluated ρ int of (3.0 ± 0.9) × 10 −8 Ω cm 2 for InAs with an electron concentration of 2 × 10 18 cm −3 is found to be in good agreement with the theoretically calculated value under a Schottky barrier height of 0 eV.

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Thermal stability of Ti/Pt/Au ohmic contacts on InAs/graded InGaAs layers

Cited by 15 publications

References 20 publications

Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors

Accurate evaluation of specific contact resistivity between InAs/Ni–InAs alloy using a multi-sidewall transmission line method

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