Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd<inf>2</inf>O<inf>3</inf> as gate dielectric

Abstract

Abstract-Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd 2 O 3 are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd 2 O 3 dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 10 8 and a stable V t is observed after storage at high temperature. The beneficial effects of Gd 2 O 3 on trapping effects of MOSHEMTs are also discussed.

Fully Integrated Digital GaN-Based LSK Demodulator for High-Temperature Applications

“…GaN offers key features, including a wide bandgap (3 eV), high drift-saturation velocity, high thermal-conductivity, and low intrinsic carrier concentration [3]. Several GaN devices were implemented and tested at HT, including AlGaN/GaN HEMT (400 o C) [4,5], AlGaN/GaN MOS-HEMT (500 o C) [6] and InAlN/GaN HEMT (600 o C) [7].…”