Thermal-strain-induced splitting of heavy- and light-hole exciton energies in CuI thin films grown by vacuum evaporation

Temperature dependence of dynamical processes of photoluminescence from exciton–exciton scattering in CuI thin films

“…The samples of CuI thin films with the thickness of 100 nm were grown on a (0 0 1) NaCl substrate at 170 1C by vacuum deposition in high vacuum of $1 Â 10 À4 Pa. From the X-ray diffraction patterns, the crystalline films were grown preferentially along the /1 1 1S direction [3]. Timeresolved PL spectra were measured by using the following OKG method.…”

“…The sample temperature was controlled by a constant He-flow cryostat. The arrows indicate the free-exciton energy at each temperature obtained from the absorption spectra [3]. In this temperature region, the change of the exciton energy is negligibly small.…”

Enhancement of exciton photoluminescence intensity caused by the distortion of the crystal plane originating from the internal strain in a ZnO wafer

“…There are various photoluminescence processes. Among them, the photoluminescence processes related to the exciton and/or interband transitions are sensitive to the composition of alloy semiconductors, [1][2][3][4][5] internal strain, [6][7][8][9] and crystalline quality. [10][11][12][13][14] For example, Robins et al 3 reported that the alloy composition in Al x Ga 1-x As films is accurately determined from the analysis of the photoluminescence energy.…”

Electrodeposition and optical properties of highly oriented γ-CuI thin films

“…Several methods have been developed to grow CuI thin films based on vapor-phase techniques, such as radio frequency magnetron sputtering [4], pulse laser deposition [5], and high vacuum deposition method [10]. However, these methods require high temperature, high vacuum, complex facility, and rigid experimental procedures and which would greatly hinder their universal applications.…”