Thermal stress analysis for polyimide thin film: The effect of solvent evaporation

Bae, Young Chan

doi:10.1002/1521-3919(20000601)9:5<281::aid-mats281>3.0.co;2-f

Cited by 12 publications

(5 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This equation indicates that the birefringence of a polymer thin film is proportional to the internal stress, which is usually caused by the spin coated, crosslinking processes, and the mismatch of coefficients of thermal expansion between film and substrate. Previous studies have demonstrated that careful control of solvent evaporation and polymer curing during film heating and cooling processes are effective in partly relieving internal stress that causes thin film optical anisotropy 31. But molecular design is still essential to reduce intrinsic birefringence.…”

Section: Resultsmentioning

confidence: 99%

Crosslinkable fluorinated hyperbranched polyimide for thermo‐optic switches with high thermal stability

Cao

Jin

Liu

et al. 2012

J of Applied Polymer Sci

View full text Add to dashboard Cite

A series of fluorinated hyperbranched polyimides (FHBPIs) were synthesized by condensation of a triamine monomer, 1,3,5-tris(2-trifluoromethyl-4-minopheoxy) benzene (TFAPOB) and various aromatic dianhydride monomers with different linear length for application on integrated optical devices. Near infrared absorption measurement shows that it has high transparency in optical communication wavelength region. The glass transition temperature and thermal decomposition temperature were 189 C and 596 C, respectively. According to the atomic force microscopy analysis, the surface roughness of the FHBPI films is 0.208 nm. A classic Mach-Zehnder interferometer thermo-optic switch with single mode waveguide fabricated by FHBPIs represents excellent switching characteristic. The rise time and fall time of this device are 530 ms for both.

show abstract

Section: Resultsmentioning

confidence: 99%

Crosslinkable fluorinated hyperbranched polyimide for thermo‐optic switches with high thermal stability

Cao

Jin

Liu

et al. 2012

J of Applied Polymer Sci

View full text Add to dashboard Cite

show abstract

“…[18][19][20] Cracking of thin NiAl metal 18 and poly͑methylsilsesquioxane͒ polymer 19 films during cooling part of thermal cycling has been reported. Thermal stresses induced by the thermal expansion mismatch between the thin film material and the silicon substrate cause wafer deformation as depicted in Fig.…”

Section: Cracking Mechanisms Of Photoresistmentioning

confidence: 99%

Mask material effects in cryogenic deep reactive ion etching

Sainiemi¹,

Franssila²

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inCryogenic silicon etching in inductively coupled SF 6 /O 2 plasma has been studied, especially the behavior of mask materials. Suitability of eight different mask materials for cryogenic silicon deep reactive ion etching has been investigated. Three of the five photoresists suffered from cracking during cryogenic etching. We clarified the stages of the etching process and identified two mechanisms behind the cracking: thermal expansion mismatch and mechanical deformation from wafer clamping and backside helium pressure. Also thickness of the photoresist plays a role in cracking, but, contrary to common conception that all thick resists suffer from cracking in cryogenic etching, we found that SU-8 negative resist did not crack, even for very thick layers. This is explained to be due to its high cross-linking density. All three hard mask materials had high selectivities and were free of cracking problems. However, aluminum mask resulted in poor surface quality, while thermally grown SiO 2 and amorphous Al 2 O 3 deposited by atomic layer deposition showed smooth surfaces and sidewalls. Silicon dioxide had selectivity of 150:1, while Al 2 O 3 selectivity was 66 000:1. This extreme selectivity of Al 2 O 3 mask, combined with good surface quality, is shown to be highly beneficial in both shallow and through-wafer etching.

show abstract

“…In addition, it is difficult to fabricate patterns with high resolutions and high-precisions in polyimide films because polyimide is difficult to etch or to dissolve away by a conventional photolithography and etching processes [15][16][17]. Furthermore, fine patterns with rectangular cross-sections and well defined line-edges are difficult to achieve due to a large shrinkage (30 -60%) resulting from the thermal imidization reaction of the polyimide precursor [18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

“…The fabricated multi-layered Cu/PI interconnections were evaluated for their electric properties and the applicability of the interconnections for electric packaging was verified. 5,10,20, and 50 µm widths at a density of 0.5 were fabricated on an 8-inch Si master wafer by photolithography using a photoresist (TOK THMR-iP3650) and a contact mask aligner (EVG EVG6200). The patterns were etched to a depth of 4.2 µ m by an inductively coupled plasma reactive ion etching (ICP-RIE) system (SPP Technologies MUC-21) using SF 6 and C 4 F 8 .…”

Section: Introductionmentioning

confidence: 99%

Cu/Polyimide Multilayer Interconnections Fabricated by Nanoimprint at Every Lithography Process

Suzuki

Youn

Park

et al. 2014

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

In this study, Cu/polyimide multilayer interconnections (dual-damascene) approach based on a UV-assisted thermal nanoimprint technique at every lithography process was demonstrated aiming at developing a low-cost fabrication process for high-density interconnections in polyimide. The dual-damascene process can be simplified by nanoimprint using a multi-tiered mold, and realize fine interconnections using a soluble polyimide block copolymer with a high formability and low shrinkage during a polyimide patterning process. Three-layered Cu/polyimide structures with a minimum wire-width of 5 µm were fabricated in the polyimide by performing subsequent Cu electroplating and chemical mechanical polishing (CMP). The feasibility of the process was thus verified. The electric resistances values of the fabricated three-layered interconnections measured by a four-terminal method showed linear increase as a function of the number of interconnection vias. Heat resistance test at 260 o C which corresponded to reflow soldering process was also evaluated; less than 1.2%-increasing ratio of electric resistance was obtained in the case of 3-cycle heating.

show abstract

Thermal stress analysis for polyimide thin film: The effect of solvent evaporation

Cited by 12 publications

References 8 publications

Crosslinkable fluorinated hyperbranched polyimide for thermo‐optic switches with high thermal stability

Crosslinkable fluorinated hyperbranched polyimide for thermo‐optic switches with high thermal stability

Mask material effects in cryogenic deep reactive ion etching

Cu/Polyimide Multilayer Interconnections Fabricated by Nanoimprint at Every Lithography Process

Contact Info

Product

Resources

About