Thermal transient analysis of LED using carbon doped AlN film deposited on metal substrate as heat sink

Shanmugan, S.; Norazlina, M. S.; Devarajan, Mutharasu

doi:10.1007/s11082-014-9985-0

Cited by 6 publications

(1 citation statement)

References 11 publications

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“…Our research group has already used AlN thin film as TIM and achieved good performance on reducing total thermal resistance (R th-tot ) and junction temperature (T j ) of the LED with respect to driving currents [13]. In addition, we have also used carbon-doped AlN thin film as interface material and succeeded on improving the performance of the given LED [14]. In our another study, the AlN and BN thin film was used as TIM and tested the LED performance, and we noticed an improved light output and reduced thermal resistance (R th ) and T j for the tested LED [15,16].…”

Section: Introductionmentioning

confidence: 99%

Performance of Chemical Vapor Deposited Boron-Doped AlN Thin Film as Thermal Interface Materials for 3-W LED: Thermal and Optical Analysis

Shanmugan

Devarajan

2017

Acta Metall. Sin. (Engl. Lett.)

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Boron-doped aluminum nitride (B-AlN) thin films were synthesized on Al substrates by using chemical vapor deposition method by changing the synthesis parameters and were used as thermal interface material for high power light emitting diode (LED). The B-AlN thin film-coated Al substrate was used as heat sink and studied the performance of high power LED at various driving currents. The recorded transient cooling curve was evaluated to study the rise in junction temperature (T j), total thermal resistance (R th-tot) and the substrate thermal resistance (R th-sub) of the given LED. From the results, the B-AlN thin film (prepared at process 4) interfaced LED showed low R th-tot and T j value for all driving currents and observed high difference in R th-tot (DR th-tot = 2.2 K/W) at 700 mA when compared with the R th-tot of LED attached on bare Al substrates (LED/Al). The T j of LED was reduced considerably and observed 4.7°C as DT j for the film prepared using process 4 condition when compared with LED/Al boundary condition at 700 mA. The optical performance of LED was also tested for all boundary conditions and showed improved lux values for the given LED at 700 mA where B-AlN thin film was synthesized using optimized flow of Al, B and N sources with minimized B and N content. The other optical parameters such as color correlated temperature and color rendering index were also measured and observed low difference for all boundary conditions. The observed results are suggested to use B-AlN thin film as efficient solid thin film thermal interface materials in high power LED.

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Section: Introductionmentioning

confidence: 99%