“…Many recent studies have focused on the development of techniques to characterize the thermal resistance across interfaces that are 10s to 100s of μm below the surface of a material. − Such interfaces are abundant in modern devices, including multilayer microelectronics packaging, , wide bandgap materials and devices, , power electronics architectures, ,, and memory storage systems, and are fast becoming the largest bottleneck to sufficient heat dissipation in the next generation of these applications. Critically, interfaces at these depths are extremely challenging to characterize using existing steady-state techniques, − which are limited to spatial resolutions above several hundred μm’s, or with advanced optical pump–probe thermoreflectance techniques, which probe at depths that range between nm’s to single-digit μm below a sample surface. , Most recent techniques have relied on augmentations to existing thermoreflectance systems; for instance, several studies achieve larger thermal penetration depths by extending the range of modulation frequencies applied to the pump beam. − In general, improvements in thermal penetration depth ( δ = 2 α / f ; α is thermal diffusivity, f is modulation frequency) have been limited to <10 μm due to spreading in the upper transducer layer …”