2015
DOI: 10.1016/j.nanoen.2015.04.012
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Thermal vapor condensation of uniform graphitic carbon nitride films with remarkable photocurrent density for photoelectrochemical applications

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Cited by 225 publications
(230 citation statements)
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“…High extinction coefficients in polymeric semiconductors are mostly due to a very high density of states and high transition dipole moments and were recently also attributed to high orientation and high stiffness of the polymer chains . The extinction coefficient reveals a pronounced absorption shoulder at about 3.37 eV (λ ≈ 370 nm) attributed to π–π* transitions, in good agreement with bulk pCN (Figure S9, Supporting Information) and previous reports on pCN thin films . However, we cannot exclude at this stage also a minor contribution to the absorption due to trap states.…”
supporting
confidence: 87%
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“…High extinction coefficients in polymeric semiconductors are mostly due to a very high density of states and high transition dipole moments and were recently also attributed to high orientation and high stiffness of the polymer chains . The extinction coefficient reveals a pronounced absorption shoulder at about 3.37 eV (λ ≈ 370 nm) attributed to π–π* transitions, in good agreement with bulk pCN (Figure S9, Supporting Information) and previous reports on pCN thin films . However, we cannot exclude at this stage also a minor contribution to the absorption due to trap states.…”
supporting
confidence: 87%
“…The excitation versus emission contour plot shows that for the peak wavelength of photoluminescence emission, i.e., 466 nm, two main excitation modes with maxima at 275 and 375 nm are present. The two excitation maxima are attributed to π–π* electronic transitions in pCN thin films, whereas, the lone pair‐π* transition appears as a shoulder at about 394 nm . However, the emission processes in pCN are complex and still under debate in the scientific community .…”
mentioning
confidence: 99%
“…[23][24][25] Lately, we have succeeded to sensitize TiO 2 with C 3 N 4 by in situ deposition method that resulted in the formation of direct chemical bond between the TiO 2 and the C 3 N 4 . [23][24][25] Lately, we have succeeded to sensitize TiO 2 with C 3 N 4 by in situ deposition method that resulted in the formation of direct chemical bond between the TiO 2 and the C 3 N 4 .…”
mentioning
confidence: 99%
“…[85] Der In-situ-Gastransportmechanismus erlaubt eine vollständige Beschichtung des mesoporçsen TiO 2 -Films durch Erhitzen von pulverfçrmigen Vorstufen, die nur mit der Oberfläche des Films in Kontakt stehen. [53,86,87] Die Kondensation eines supramolekularen Komplexes wurde auch zwischen zwei Elektroden unter einer inerten Atmosphäre durchgeführt. B. Fehlen von sogenannten Pinholes,d.h.…”
Section: Wachstumsverfahrenunclassified