Thermally activated increase of the average grain size as the origin of resistivity enhancement in 
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 films grown by pulsed-laser deposition

Jaber, Nazir; Feldl, Johannes; Stöver, Julian; Irmscher, K.; Albrecht, M.; Ramsteiner, M.; Schwarzkopf, Jutta

doi:10.1103/physrevmaterials.7.014601

Phys. Rev. Materials

2023

DOI: 10.1103/physrevmaterials.7.014601

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Thermally activated increase of the average grain size as the origin of resistivity enhancement in NbO2 films grown by pulsed-laser deposition

Nazir Jaber

Johannes Feldl

Julian Stöver

et al.

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2024

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Sm substitution induced spin reorientation and stabilization of double perovskite structure resulting in enhanced magnetoelectricity in LaYFe2O6

Ghosh,

Mishra,

Barik

et al. 2024

Journal of Applied Physics

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We report an enhanced magnetoelectric (ME) effect in spin–phonon coupled single-phase La1−xSmxYFe2O6 (0 ≤ x ≤ 1). The structural, electric, magnetic, and ME properties have been investigated to establish their interplay leading to magnetoelectricity. X-ray diffraction study suggests the facilitation of the P21nm phase (double perovskite lattice arrangements) formation and improved structural order due to the substitution of Sm in the lattice. Antiferromagnetic (AFM) transition ∼700 K along with a spin-reorientation transition around room temperature (RT) and below is observed in the thermomagnetic curve. The indication of short range ordering in the magnetization data in the form of a non-Griffiths-like phase (nGP) is observed. The short range ordering could be minimized along with consequent improvement in AFM ordering, due to Sm substitution. An enhanced (∼31% with respect to x = 0) RT first-order ME coupling coefficient ∼0.59 mV cm−1 Oe−1 in x = 0.75 composition is observed. The findings reported here open the door to exercise spin-reorientation transition in the spin–phonon coupled double perovskites for spintronic device applications.

show abstract

Sm substitution induced spin reorientation and stabilization of double perovskite structure resulting in enhanced magnetoelectricity in LaYFe2O6

Ghosh,

Mishra,

Barik

et al. 2024

Journal of Applied Physics

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show abstract

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Thermally activated increase of the average grain size as the origin of resistivity enhancement in NbO2 films grown by pulsed-laser deposition

Cited by 1 publication

References 46 publications

Sm substitution induced spin reorientation and stabilization of double perovskite structure resulting in enhanced magnetoelectricity in LaYFe2O6

Sm substitution induced spin reorientation and stabilization of double perovskite structure resulting in enhanced magnetoelectricity in LaYFe2O6

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