Thermally and Chemically Robust, Non-Reflowable Low-k Spin-on Glass (k = 2.4) for Gap-Filling Technology in Sub-50-nm Memory Devices

Ryuzaki, Daisuke; Sakurai, Haruaki; Yoshikawa, Takahiro; Torii, Kazuyoshi

doi:10.1109/vlsit.2006.1705241

Cited by 1 publication

(2 citation statements)

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“…The step height of the wires, including the SiN thickness, was 200 nm. The wires were filled with a 500-nm-thick HDP-CVD SiO 2 film or a ULK-SOG (k ¼ 2:4) 13) as the ILDs.…”

Section: Methodsmentioning

confidence: 99%

“…Taking advantage of the low-damage polishing capability of the nanocolloidal ceria slurry, we applied it to the planarization of a ULK-SOG ILD (k ¼ 2:4) 13) in the interconnect structure. The pad selection was limited in this case, because the ULK-SOG is so fragile that it was easily scratched or peeled off by the hard pad (Shore D 88).…”

Section: Low-damage Polishing Of Ulk-sogmentioning

confidence: 99%

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Chemical Mechanical Polishing with Nanocolloidal Ceria Slurry for Low-Damage Planarization of Dielectric Films

Ryuzaki

Hoshi

Machii

et al. 2012

Jpn. J. Appl. Phys.

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New chemical mechanical polishing processes using nanocolloidal ceria slurry are proposed for high-precision and low-damage planarization of silicon-dioxide-based dielectric films. In the polishing process of a shallow trench isolation structure, a hard pad and a cationic polymer additive are used in combination with the slurry. The new process is effective in improving the planarity and reducing the microscratch count in comparison with a conventional polishing process with calcined ceria slurry and a standard pad. In the polishing process of an interconnect structure with ultralow-k interlayer dielectrics (ULK-ILDs), the standard pad should be used since the ULK-ILDs are easily damaged. By employing a spin-ontype ULK-ILD having a self-planarizing effect, a high planarity is obtained when using the nanocolloidal ceria slurry with the standard pad. The electrical measurement of the interconnect structure indicates that dielectric damage due to the process is successfully suppressed.

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“…The step height of the wires, including the SiN thickness, was 200 nm. The wires were filled with a 500-nm-thick HDP-CVD SiO 2 film or a ULK-SOG (k ¼ 2:4) 13) as the ILDs.…”

Section: Methodsmentioning

confidence: 99%

Section: Low-damage Polishing Of Ulk-sogmentioning

confidence: 99%