Thermally and photo-induced irreversible changes in the optical properties of amorphous GexSe100-x films

Sleeckx, Erik; Tichý, L.; Nagels, P.; Callaerts, R.

doi:10.1016/0022-3093(96)00030-0

Cited by 49 publications

(29 citation statements)

References 4 publications

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“…3) and are 2.276 and 2.301 eV, respectively. For the films GeS 2 , GeSe 2 , GeSe 3, the pseudo-forbidden gap values obtained by us earlier [15,17] [12], respectively. In our opinion, this difference between E g values is caused by technological factors.…”

Section: Resultsmentioning

confidence: 99%

“…The parameter B is an interesting parameter, since it can be taken as a measure of disorder. For example, for GeS 2 , GeSe 2 , Ge 2 Se 3 and GeSe 3 films the values of parameter B 1/2 is 549 [14], 913 [12], 552 [12], and 827 cm -1/2 eV -1/2 [12], respectively. (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Amorphous films of germanium chalcogenides (Ge-S, Ge-Se, Ge-S-Se, Ge-Sb-S systems) as well as respective glasses possess a nano-heterogeneous structure [6,12,18,[21][22][23][24][25][26][27][28][29]. The basic elements of structural network in glasses and films with the germanium content above 25% are tetrahedrons GeS n Se 4-n (n = 0 -4).…”

Section: Resultsmentioning

confidence: 99%

“…In recent decades, intensively studied are photoinduced effects in amorphous films of germanium chalcogenides [11][12][13][14][15][16][17][18]. First of all, in view of practical applications, these materials are attractive if accounting the fact that they do not contain the poisonous arsenic.…”

Section: Introductionmentioning

confidence: 99%

“…Second, in these films under illumination one can observe both effects of photodarkening and photobleaching (growth of the pseudogap and optical transparency). Moreover, while germanium sulfide films are characterized only by photobleaching [13][14][15], the films Ge x Se 100-x demonstrate both effects: photodarkening in Ge-dificient (x<20) and photobleaching in Ge-rich (x>20) samples [11,12,[16][17][18].…”

Section: Introductionmentioning

confidence: 99%

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Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

Рубіш¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS 2 ) 50 (GeSe 2 ) 50 and (GeS 3 ) 50 (GeSe 3 ) 50 , prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral range. It has been ascertained that annealing of the films leads to the absorption edge shift into the short-wave spectral region. The values of pseudo-gap width E g and film refraction index n have been determined. Changes in optical properties of films are caused by structural transformations taking place in them under laser illumination and annealing.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

Рубіш¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Optical Storage Films, Chalcogenide Compound Films

Vedeshwar¹

2002

Encyclopedia of Smart Materials

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The utilization of novel physical properties of materials for their possible commercial applications has opened up tremendous scope for materials research. In the last two or three decades there has been increasing interest and research, both basic and application oriented, on materials behaving smartly. Along with the developments in storage capacity, data stability, storage speed, and the saturation in magnetic recording, there are research on new materials suitable for optical or magneto‐optical storage applications. Chalcogenide compounds have been known for more than a half century as disordered semiconductors. Their potential as storage materials became recognized three decades ago. Chalcogenides have peculiar properties that make them smart enough to occupy an important class of materials known as “phase‐change” media in optical storage applications. This article is mainly focus on the real‐time digital recording in chalcogenide compound films, though holographic recordings can also be done on these materials.

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Block copolymer formation from the melt reaction between polycarbonate and poly(ethylene‐co‐butylene) diol

Lee

Park

Lee

2001

J of Applied Polymer Sci

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ABSTRACT:The block copolymer formation from the exchange reaction between polycarbonate (PC) and poly(ethylene-co-butylene) diol (POH) occurring during melt mixing was studied. The exchange reaction proceeded by the attack of active chain ends of hydroxyl-terminated POH on the inner carbonate groups of PC. The reaction was accelerated in basic condition in the presence of a hindered amine. The formation of block copolymer was confirmed by 1 H-NMR analysis. The proceeding of the exchange reaction was analyzed with UV spectrometry by measuring the absorbance at 285 nm of the less-reactive phenolic end group of PC oligomers produced. The reaction was terminated when the hydroxyl end groups of POH were completely consumed. It was found from the analyses by GPC and DSC that the exchange reaction between PC and POH takes place rather uniformly by random scission of the chain. The block copolymer obtained here will be employed as a compatibilizer of PC/polyolefin blends in a future study.

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Thermally and photo-induced irreversible changes in the optical properties of amorphous GexSe100-x films

Cited by 49 publications

References 4 publications

Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

Optical Storage Films, Chalcogenide Compound Films

Block copolymer formation from the melt reaction between polycarbonate and poly(ethylene‐co‐butylene) diol

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