Abstract:With the recent commercialization of large-scale integration products, which include embedded magnetoresistive random-access memory, the importance of simulation models for MRAM circuits (MRAM compact models) has been continuously increasing. To accurately reproduce the characteristics of MRAM devices, the physical mechanism of the MRAM device including temperature dependency should be precisely described. In this study, we propose an MRAM compact model based on the Landau-Lifshitz-Bloch equation according to … Show more
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