2017
DOI: 10.1021/acs.jpcc.7b06925
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Thermally Controlled Bonding of Adenine to Cerium Oxide: Effect of Substrate Stoichiometry, Morphology, Composition, and Molecular Deposition Technique

Abstract: The adsorption of adenine, one of the structural units of DNA and RNA, on nanostructured cerium oxide was studied using synchrotron radiation based techniques: photoelectron and X-ray absorption spectroscopies. Using a systematic approach, we studied this biomolecule's bonding to the inorganic surface and examined the effects of different stoichiometry, morphology and composition of cerium oxide films, as well as two methods of molecular deposition (evaporation in vacuum and deposition from aqueous solution). … Show more

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Cited by 7 publications
(5 citation statements)
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“…A detailed description of the beamline end station can be found in Ref. [26]. The Ce 3d core levels were acquired with 1486.6 eV (Al Kα radiation) photon energy and total resolution of 1.00 eV.…”
Section: Methodsmentioning
confidence: 99%
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“…A detailed description of the beamline end station can be found in Ref. [26]. The Ce 3d core levels were acquired with 1486.6 eV (Al Kα radiation) photon energy and total resolution of 1.00 eV.…”
Section: Methodsmentioning
confidence: 99%
“…The Ce 3d core levels were acquired with 1486.6 eV (Al Kα radiation) photon energy and total resolution of 1.00 eV. The valence band (VB) spectra measured at photon energies of 121.4, 124.8 and 115 eV, with total resolution of 0.17 eV, provided resonant spectra of cerium [26]. The emission from Ce 4f states at binding energy about 1.4 eV (photon energy 121.4 eV) and emission from hybridized oxygen-cerium states at about 4.0 eV (photon energy 124.8 eV) relative to the off-This item was downloaded from IRIS Università di Bologna (https://cris.unibo.it/)…”
Section: Methodsmentioning
confidence: 99%
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“…18,21,50 The BE of the photoemission features for the adlayers on Ce 2 O 3 was systematically higher than that for the glycine/CeO 2 system, which was attributed to the different band bending of the semiconducting oxide films. 40,51 The integral intensities of the N 1s and C 1s signals after annealing at each temperature are shown in Fig. 4a.…”
Section: Srpesmentioning
confidence: 99%