Thermally curable polymers consisting of alcohol-functionalized cyclotetrasiloxane and melamine derivatives for use as insulators in OTFTs

Ha, Jae Du; Kim, Yun-Tae; Roh, Jeongkyun; Park, Jong Il; Kwak, Jeonghun; Lee, Changhee; Hwang, Do‐Hoon

doi:10.1016/j.orgel.2014.10.021

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…In the growing field of organic electronics, a major challenge is providing reliable materials and methodologies for fabricating unconventional electronic devices. − Organic thin-film transistors (OTFTs) are of paramount interest, promising mechanical flexibility and facile solution processing. , The semiconducting layer has been by far the most investigated OTFT component, although the other materials and interfaces are also critical to performance. In particular, plastic electronics applications require that the gate dielectric evolve from a conventional rigid metal oxide film (e.g., SiO 2 ) to materials having a larger dielectric constant k , mechanical flexibility, and low voltage operation, as well as enabling fine-tuning of key device metrics such as threshold ( V TH ) and turn-on voltage ( V ON ). , Viable SiO 2 alternatives include metal oxides, electrolytes, self-assembled monolayers (SAMs) on metal oxides, and high-capacitance ultrathin/high- k polymers and polymer blends, each having their own strengths and limitations. − …”

Section: Introductionmentioning

confidence: 99%

The Dipole Moment Inversion Effects in Self-Assembled Nanodielectrics for Organic Transistors

Wang¹,

Carlo

Turrisi

et al. 2017

Chem. Mater.

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We compare and contrast the properties of hybrid organic−inorganic self-assembled nanodielectrics (SANDs) based on alternating layers of solution-processed ZrO x and either of two phosphonic acid-functionalized azastilbazolium π-units having opposite dipolar orientations. Conventional Zr-SAND and new inverted IZr-SAND are characterized by Kevin probe, optical spectroscopy, capacitance−voltage measurements, AFM, X-ray reflectivity, and electronic structure computation. The molecular dipolar orientation affects thin-film transistor (TFT) threshold and turn-on voltages for devices based on either p-channel pentacene or n-channel copper perfluorophthalocyanine. Specifically, Zr-SAND shifts threshold and turn-on voltages to more positive values, whereas IZr-SAND shifts them in the opposite direction. Capping these SANDs with −SiMe 3 groups enhances the effect, affording a 1.3 V difference in turn-on voltage for IZr-SAND vs Zr-SAND-gated organic TFTs. Such tunability should facilitate the engineering of more complex circuits. Previously, we reported families of robust, structurally welldefined self-assembled nanodielectrics (SANDs) offering high capacitance, facile fabrication, and broad applicability to diverse 50 semiconductors. 19,20 Our most advanced SANDs consist of 51 alternating high-k metal oxide (ZrO x or HfO x) and highly 52 f1 polarizable, high-k PAE dipolar nanolayers (Figure 1a), all 53 processed from solution under ambient. 21−23 To date, the 54 effects, if any, of PAE dipolar orientation on the dielectric 55 properties and OTFT response remain unknown. Here, we 56 address this issue using an "inverted" PAE unit, named IPAE, 57 to create a structurally inverted SAND (Figure 1b) and show 58 from Kevin probe measurements, molecular orbital computa-59 tions, and OTFT measurements that dipolar inversion occurs 60 and that it affects, in an informative and useful way, the 61 principal OTFT parameters relevant to circuit design and 62 fabrication. 24,25 63 ■ EXPERIMENTAL SECTION 64 IPAE Synthesis and Characterization. All reagents are 65 commercially available and were used without further purification 66 unless otherwise stated. Anhydrous dichloromethane was distilled

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Section: Introductionmentioning

confidence: 99%

The Dipole Moment Inversion Effects in Self-Assembled Nanodielectrics for Organic Transistors

Wang¹,

Carlo

Turrisi

et al. 2017

Chem. Mater.

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“…Leakage current density is an important parameter in the evaluation of the insulating properties of a given dielectric layer, which greatly affects the transistor on/off ratio . Figure shows the current density through gate dielectrics versus bias voltage for MIM structures.…”

Section: Resultsmentioning

confidence: 99%

Surface Infused Interpenetrating Network as Gate Dielectric for High Performance Thin Film Transistors

Han

Zhang

et al. 2017

Macro Materials & Eng

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An effectively novel surface infusion method is proposed and employed as a modification process of insulator to simultaneously improve surface morphology and densification of dielectric layers in an organic filed effect transistor. The process involves two steps: infusion of liquid monomers into the cross‐linked poly(4‐vinylphenol) films and photopolymerization to form interpenetrating polymer network (IPN) within the surface. The modified films exhibit excellent insulating properties with smooth surface, high densification, and low leakage current. Moreover, the improved dielectric surface with infused IPN results in a better semiconducting polymer ordering, which facilitates charge transport. In correlation to device performance, it shows that the charge mobility improves from 0.24 to 1.60 cm2 V−1 s−1 along with improved threshold voltage and on/off ratio. This novel method can be broadly applicable to the simple optimization of polymeric gate dielectric for the further improvement of organic thin film transistors.

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“…As a result of those needs, the use of silicon-based materials has gained a predominant significance [3]. It corresponds to the employment of not only simple poly- [4] or cyclosiloxanes [5] but organosilicons namely described as hybrid materials [6]. Within this group, a particularly important role possesses silsesquioxanes (POSS ® , SQs).…”

Section: Introductionmentioning

confidence: 99%

Slick Synthetic Approach to Various Fluoroalkyl Silsesquioxanes—Assessment of their Dielectric Properties

et al. 2022

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We present a smart and efficient methodology for the synthesis of a variety of fluorinated silsesquioxanes (SQs) with diverse Si-O-Si core architecture. The protocol is based on an easy-to-handle and selective hydrosilylation reaction. An investigation on the placement of the reactive Si-HC=CH2 vs. Si-H in the silsesquioxane, as well as silane vs. olefin structure, respectively, on the progress and selectivity of the hydrosilylation process, was studied. Two alternative synthetic pathways for obtaining a variety of fluorine-functionalized silsesquioxanes were developed. As a result, a series of mono- and octa- T8 SQs, tri- ‘open-cage’ T7 SQs, in addition to di- and tetrafunctionalized double-decker silsesquioxane (DDSQ) derivatives, were obtained selectively with high yields. All products were characterized by spectroscopic (NMR, FTIR) techniques. Selected samples were subjected to the measurements revealing their dielectric permittivity in a wide range of temperatures (from −100 °C to 100 °C) and electric field frequencies (100–106 Hz).

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Thermally curable polymers consisting of alcohol-functionalized cyclotetrasiloxane and melamine derivatives for use as insulators in OTFTs

Cited by 6 publications

References 29 publications

The Dipole Moment Inversion Effects in Self-Assembled Nanodielectrics for Organic Transistors

The Dipole Moment Inversion Effects in Self-Assembled Nanodielectrics for Organic Transistors

Surface Infused Interpenetrating Network as Gate Dielectric for High Performance Thin Film Transistors

Slick Synthetic Approach to Various Fluoroalkyl Silsesquioxanes—Assessment of their Dielectric Properties

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