Thermally Deposited Pt/InSe/Nb₂O₅/Ag Stacked Layers Designed as Negative Capacitance Sources and Antennas for 5 G/6 G Networks

Abstract

Herein, Pt/InSe/Nb2O5/Ag (ISNO) stacked layers are designed as multichannel 5 G/6 G network antennas and negative capacitance (NC) sources. The devices are fabricated using thermal deposition technique to coat Pt/InSe thin films with transparent Nb2O5 dielectric windows. While Pt thin films induce the crystallinity of InSe, the Nb2O5 layer remains amorphous. The impedance spectroscopy studies show that the Pt/InSe/Ag (IS) and (ISNO) antenna channels exhibit resonance–antiresonance peaks at driving frequencies of ≈0.4 and ≈1.1 GHz, respectively. Both the IS and ISNO antenna channels exhibit the NC effect in a wide range of frequency domain. In addition, ISNO antennas show signal transmission above 1.70 GHz with a return loss value of 28 dB and voltage standing wave ratios of 1.20. The range of frequencies over which the antenna performs well (bandwidth) extends from 1.54 to 1.80 GHz. Practical tests of one‐port and two‐port reflection/transmission using a network analyzer operative in the frequency domain of 0.01–6.0 GHz highlight the system's differing isolation and coupling characteristics at 2.43 and 6.0 GHz, respectively. The high levels of isolation at 6.0 GHz assure the suitability of the system for applications requiring minimal reverse transmission and high signal integrity. The NC effect, wide bandwidth, and high signal isolation characteristics are preferable in electronics and 5 G/6 G networks.