Thermally-driven formation method for growing (quantum) dots on sidewalls of self-catalysed thin nanowires

Zhang, Yunyan; Fonseka, H. Aruni; Yang, Hui; Yu, Xingxing; Jurczak, P.; Huo, Suguo; Sánchez, Ana; Liu, Huiyun

doi:10.1039/d1nh00638j

Cited by 3 publications

(2 citation statements)

References 53 publications

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“…On the other hand, material susceptibility occurs as stimuli-responsive changes for external energy sources, such as mechanical stress-strain deformation (piezoelectric and elastoplastic effect), acoustic waves (mechanical vibration), magnetic field fluctuations (spin-orbit effect), thermal gradient (thermomechanical vibration), electromagnetic waves (photocatalytic activity by light absorption in frequencies/wavelength ranges), and radioactive isotopes (betavoltaic effect). The progression toward continuous scaling and property tuning is extremely important when considering a variety of distinctive behaviors involving more distributed energy harvesting and conversion, for example, embedding QDs on sidewalls of self-catalyzed thin nanowires (Zhang Y. et al, 2022). Accordingly, the benefits of multifunctional materials may further open opportunities for energyefficient quantum computing and sensing within integrated circuit systems in information and communication technologies.…”

Section: Global Market Drivers Ongoing Challenges and Needsmentioning

confidence: 99%

Searching guidelines for scalable and controllable design of multifunctional materials and hybrid interfaces: Status and perspective

Echeverrigaray

Álvarez²

2022

Front. Chem. Eng.

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The urgent need to address the global sustainability issues that modern society is currently facing requires the development of micro and nanotechnologies, which rely largely on functional materials. Beyond studies focused solely on low-dimensional materials, broader research related to multifunctionality has shown that the major efforts to meet these criteria for new electronic, photonic, and optoelectronic concepts, particularly to achieve high-performance devices, are still challenging. By exploiting their unique properties, a comprehensive understanding of the implications of research for the synthesis and discovery of novel materials is obtained. The present article encompasses innovation research as an alternative optimization and design for sustainable energy development, bridging the scaling gap in atomically controlled growth in terms of surface heterogeneity and interfacial engineering. In addition, the corresponding research topics are widely regarded as a scientometric analysis and visualization for the evaluation of scientific contributions into the early 20 years of the 21st century. In this perspective, a brief overview of the global trends and current challenges toward high-throughput fabrication followed by a scenario-based future for hybrid integration and emerging structural standards of scalable control design and growth profiles are emphasized. Finally, these opportunities are unprecedented to overcome current limitations, creating numerous combinations and triggering new functionalities and unparalleled properties for disruptive innovations of Frontier technologies.

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Section: Global Market Drivers Ongoing Challenges and Needsmentioning

confidence: 99%

Searching guidelines for scalable and controllable design of multifunctional materials and hybrid interfaces: Status and perspective

Echeverrigaray

Álvarez²

2022

Front. Chem. Eng.

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“…Density Functional Theory Modeling. The starting points for our calculations were the experimentally determined structures of ZB GaAs 38 and theoretical WZ GaAs. Both supercells include 4 Ga and 4 As atoms.…”

Section: ■ Introductionmentioning

confidence: 99%

Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design

Hou

Fonseka

Martelli

et al. 2023

ACS Appl. Nano Mater.

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Crystal-phase engineering between zinc blende (ZB) and wurtzite (WZ) structures is becoming an important method in designing unique optoelectronic and electronic semiconductor devices. Doping to engineer their electric properties is thus of critical importance, but a direct experimental comparison in doping these two crystal structures is still missing. Nanowires (NWs) allow the coexistence of both structures due to their special growth mode. The differences in dopant incorporation between the two phases are studied here in GaAs NW shells that are coherently grown around the NWs, hence maintaining the crystal structure of the core. The Si dopant is observed to have a higher incorporation efficiency into the WZ structure due to a 2 times lower incorporation energy compared with that of the ZB structure. Besides, it can also be predicted that Si is more inclined toward Ga sites in both structures. Indeed, the As-site doping energy of the WZ structure is several orders of magnitude higher than that of Ga sites, allowing a lower doping compensation effect. This work provides useful information for doping control and hence designing crystal-phase devices.

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Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

Yan,

Li,

Zhang

2025

Nanoscale Horiz.

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Thermally-driven formation method for growing (quantum) dots on sidewalls of self-catalysed thin nanowires

Abstract: This work developed a technique to grow quantum dots onto the nanowire (NW) sidewalls, using a thermally-driven mechanism. It has no restrictions on the NW diameter or the participation of elastic strain, which opens a new avenue to NW QD growth.

Cited by 3 publications

References 53 publications

Searching guidelines for scalable and controllable design of multifunctional materials and hybrid interfaces: Status and perspective

Searching guidelines for scalable and controllable design of multifunctional materials and hybrid interfaces: Status and perspective

Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

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