Thermally excited multiband conduction in LaAlO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>/SrTiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>heterostructures exhibiting magnetic scattering

Guduru, V. K.; McCollam, A.; Jost, A.; Wenderich, S.; Hilgenkamp, H.; Maan, J.C.; Brinkman, Alexander; Zeitler, U.

doi:10.1103/physrevb.88.241301

Cited by 25 publications

(33 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ref. 31 reports that for high electron densities, the high-mobility component of their electron gas comprises less than 10% of the total electron density, while Ref. 28 found that at intermediate densities the high-mobility component contains a third of the total electron density.…”

Section: Discussionmentioning

confidence: 99%

“…The mobilities of the two components vary from sample to sample, and may differ by orders of magnitude. [27][28][29][30][31] While the twoband interpretation is conceptually useful, it has been noted that inconsistencies within the two-band analysis suggest a more complicated band structure. 30 At low electron densities, the picture is clearer: experiments have found a Lifshitz transition near electron densities of 1.5 × 10 13 cm −2 , 30 which is slightly above the metalinsulator transition at ≈ 10 13 cm −2 .…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature-dependent band structure ofSrTiO3interfaces

Raslan¹,

Lafleur²,

Atkinson³

2017

Phys. Rev. B

View full text Add to dashboard Cite

We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO3 and a number of polar cap layers, including LaTiO3, LaAlO3, and GdTiO3. The model treats conduction electrons within a tight-binding approximation, and the dielectric polarization via a Landau-Devonshire free energy that incorporates strontium titanate's strongly nonlinear, nonlocal, and temperature-dependent dielectric response. The self-consistent band structure comprises a mix of quantum 2D states that are tightly bound to the interface, and quasi-three-dimensional (3D) states that extend hundreds of unit cells into the SrTiO3 substrate. We find that there is a substantial shift of electrons away from the interface into the 3D tails as temperature is lowered from 300 K to 10 K. This shift is least important at high electron densities (∼ 10 14 cm −2 ), but becomes substantial at low densities; for example, the total electron density within 4 nm of the interface changes by a factor of two for 2D electron densities ∼ 10 13 cm −2 . We speculate that the quasi-3D tails form the low-density high-mobility component of the interfacial electron gas that is widely inferred from magnetoresistance measurements.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Temperature-dependent band structure ofSrTiO3interfaces

Raslan¹,

Lafleur²,

Atkinson³

2017

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…There is ample evidence regarding inhomogeneity in the 2DEG induced at the surface of STO, which has been studied under different conditions, e.g., electric double layer and LaXO 3 /STO (X ¼ Al,Ti) heterostructures. [23][24][25][26][27][28] Therefore, we applied the standard 1D model of FETs 29 to our device. This model assumes the gradual channel approximation.…”

mentioning

confidence: 99%

Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition

Schulman

Kitoh

Stoliar

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this context, we examine the channel formation of SrTiO 3 -based solid-gated field-effect devices in which a 2D metal phase coexists with a semiconductor phase. A non-monotonic voltage-gain transfer characteristic with negative and positive slope regions is observed. We introduce a numerical model that helps to rationalize the experimental findings in terms of the established physics of field-effect transistors and percolation. Our numerical study not only reproduces the experimental results but also provides non-trivial predictions, which we verify experimentally.

show abstract

“…A number of possible mechanisms are proposed to be responsible for the conduction at the interface [20][21][22][23][24][25], which can lead to multiple charge-carrier conduction if several are active. Indeed multiple carrier conduction has been found in SrTiO 3 /LaAlO 3 interfaces over a wide range of growth conditions [4,17,[26][27][28][29][30].…”

mentioning

confidence: 99%

“…Until the present, most investigations on the electronic properties of LaAlO 3 /SrTiO 3 interfaces have been done using transport experiments [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]26,[29][30][31][32], while measurements of thermoelectric power are still sparse in SrTiO 3 /LaAlO 3 interfaces [28,33,34]. Whereas transport experiments are generally dominated by the charge-carrier mobility, contributions of lower mobility can be accessed in thermoelectric power measurements.…”

mentioning

confidence: 99%

Transport and thermoelectric properties of theLaAlO3/SrTiO3interface

et al. 2015

Self Cite

View full text Add to dashboard Cite

The transport and thermoelectric properties of the interface between SrTiO 3 and a 26-monolayer-thick LaAlO 3 layer grown at high oxygen pressure have been investigated at temperatures from 4.2 to 100 K and in magnetic fields up to 18 T. For T > 4.2 K, two different electronlike charge carriers originating from two electron channels which contribute to transport are observed. We probe the contributions of a degenerate and a nondegenerate band to the thermoelectric power and develop a consistent model to describe the temperature dependence of the thermoelectric tensor. Anomalies in the data point to an additional magnetic field dependent scattering.

show abstract

Thermally excited multiband conduction in LaAlO3/SrTiO3heterostructures exhibiting magnetic scattering

Cited by 25 publications

References 46 publications

Temperature-dependent band structure ofSrTiO3interfaces

Temperature-dependent band structure ofSrTiO3interfaces

Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition

Transport and thermoelectric properties of theLaAlO3/SrTiO3interface

Contact Info

Product

Resources

About