2017
DOI: 10.1063/1.4982936
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Thermally induced anchoring of a zinc-carboxyphenylporphyrin on rutile TiO2 (110)

Abstract: Functionalization of surfaces has become of high interest for a wealth of applications such as sensors, hybrid photovoltaics, catalysis, and molecular electronics. Thereby molecule-surface interactions are of crucial importance for the understanding of interface properties. An especially relevant point is the anchoring of molecules to surfaces. In this work, we analyze this process for a zinc-porphyrin equipped with carboxylic acid anchoring groups on rutile TiO2 (110) using scanning probe microscopy. After ev… Show more

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Cited by 14 publications
(16 citation statements)
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“…The development of the ν s (O‐C‐O) band during sample heating allows us to follow the anchoring of the MCTPP layer with increasing temperature. Previously, a strong temperature dependence of the anchoring reaction was also observed for MCTPP on Co 3 O 4 (111) and ZnDCPP on TiO 2 (110) . The isothermal experiments at 300 and 450 K, further suggest that a reorientation of the porphyrins takes place in the first layer concomitant with the anchoring reaction.…”
Section: Resultsmentioning
confidence: 99%
“…The development of the ν s (O‐C‐O) band during sample heating allows us to follow the anchoring of the MCTPP layer with increasing temperature. Previously, a strong temperature dependence of the anchoring reaction was also observed for MCTPP on Co 3 O 4 (111) and ZnDCPP on TiO 2 (110) . The isothermal experiments at 300 and 450 K, further suggest that a reorientation of the porphyrins takes place in the first layer concomitant with the anchoring reaction.…”
Section: Resultsmentioning
confidence: 99%
“…The research revealed numerous ways to steer self-assembly and on-surface reactions by a careful choice of functionalization and substrates [2]. Despite its importance for applications, the investigation of the structure and binding of porphyrins on semiconducting and, notably, metal oxide surfaces remains scarce [3][4][5][6][7][8][9][10][11][12][13]. We chose here to investigate two different porphyrins on thin films of cobalt(II) oxide (CoO).…”
Section: Introductionmentioning
confidence: 99%
“…Cobalt(II) oxide not only is a semi-conducting oxide, it is also an anti-ferromagnet due to electron correlation effects and it shows catalytic activity [14][15][16][17]. As a thin film grown on Ir(100), the oxide is of extremely high quality [18][19][20] avoiding the complexity that arises from atomicscale defects in bulk materials [5][6][7][8]. The atomic structure of these films has been investigated in detail by diffraction methods [18][19][20][21].…”
Section: Introductionmentioning
confidence: 99%
“…In contrast to TiO 2 [311], wide-bandgap p-type semiconductors, such as NiO, and their functionalization with sensitizers, have been less extensively studied by using SPM [1215]. NiO was the first reported p-type wide-bandgap semiconductor [16], and can be used for the fabrication of p-type DSSCs with photoactive cathodes, a first step towards the design of tandem solar cells with two photoactive electrodes [1718].…”
Section: Introductionmentioning
confidence: 99%