Thermally Induced Defect Behavior and Effective Intrinsic Gettering Sink in Silicon Wafers

Shimura, Fumio; Tsuya, Hideki; Kawamura, Tsutomu

doi:10.1149/1.2127686

Cited by 59 publications

(24 citation statements)

References 5 publications

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“…It has been proved that these defects have dangling bonds which act as low energy heterogeneous nucleation sites for impurities such as oxygen and other transition metals, and also has unpaired electrons that attract negative charge species. [22][23][24] Accordingly, leakages in diodes fabricated on wafers subjected to lower implantation dosages, e.g., 7 ¥ 10 13 cm -2 and 4 ¥ 10 14 cm -2 , are expected to be higher than that in diodes fabricated on a wafer subjected to 1 ¥ 10 15 cm -2 implantation dosage.…”

Section: Resultsmentioning

confidence: 99%

Defects in annealed 1.5 MeV boron implanted p-type silicon

Ong

Liu

et al. 2001

Journal of Elec Materi

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Section: Resultsmentioning

confidence: 99%

Defects in annealed 1.5 MeV boron implanted p-type silicon

Ong

Liu

et al. 2001

Journal of Elec Materi

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“…4 ( a ) ; however, no microprecipitates were observed. It is characteristic for SF observed in W-1 specimens not to h a v e precipitate colonies in the central region of the SF plane (3,18,19). Moreover, even though ~5 X 101~ atoms/cm ~ of oxygen was shown to precipitate in step 2 of the W-1 specimen (Fig.…”

Section: Tem Observation For Induced Defects--as Shown Inmentioning

confidence: 85%

“…Although oxygen precipitation and induced defect behavior in silicon crystals subjected to a simple heat-treatment have been well documented (1)(2)(3), oxygen behavior during multistep annealing has not yet been precisely investigated. High temperature (~> 1200=C) annealing is one of mahy device processes that silicon wafers can be exposed to.…”

mentioning

confidence: 99%

Multistep Repeated Annealing for CZ‐Silicon Wafers: Oxygen and Induced Defect Behavior

Shimura¹,

Tsuya²

1982

J. Electrochem. Soc.

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Oxygen and induced defect behavior in CZ-silicon wafers subjected to multistep annealing repeated alternately at 750~ or 1000~ and 1230~ has been examined using infrared absorption, Secco etching, and TEM. It is shown that oxygen precipitation or redissolution behavior is distinctly affected by high temperature (1230~ heat-treatment. If either precipitate nuclei or supersaturated oxygen atoms are missing, precipitated oxygen redissolves. In terms of qualitative oxygen behavior, multistep heat-treatments including high temperature annealing gradually leads to the transformation of platelike precipitates into roundish precipitates that are considered to be crystalline and amorphous SiO2, respectively. Furthermore, it is suggested that the type of lattice defect induced by oxygen precipitation strongly depends on the density and size of initial oxygen precipitates, and then a new two-stage stacking fault formation mechanism is tentatively proposed.When silicon substrate wafers are subjected to various heat-treatments through device processes, a variety of defects are produced as a result of the precipitation of supersaturated oxygen in the bulk or heavy metal contaminants on the water surface. Although oxygen precipitation and induced defect behavior in silicon crystals subjected to a simple heat-treatment have been well documented (1-3), oxygen behavior during multistep annealing has not yet been precisely investigated. High temperature (~> 1200=C) annealing is one of mahy device processes that silicon wafers can be exposed to. Not only is it relatively difficult to generate inner defects for intrinsic gettering (IG) sinks after high temperature annealing (4), but the density of those defects also decreases during high temperature annealing (3, 5). With oxygen precipitation and dissolution processes as well as with IG effectiveness in wafers used in silicon device fabrication, it is important to investigate oxygen and induced defect behavior during multistep heat-treatments, especially including high temperature annealing.In this paper, oxygen and induced defect behavior in CZ-silicon wafers subjected to multistep repeated annealing procedures (steps 1~8), including high temperature annealing, is investigated using infrared absorption (air-reference infrared: AIR, differential infrared:DIR), Secco etching, and TEM. ExperimentalSamples used in this study were taken from the seed end of a 75 mm diam boron doped <111> Czochralskigrown (CZ) crystal with an overall length of approximately 410 mm of the regular diameter section. To ensure thorough examination of the bare crystal, heattreatment for oxygen stabilization was not carried out. Wafers 2 mm thick were etched to remove the damaged layer and then mechanically-chemically polished on both sides in the usual fashion. The oxygen concentration of as-grown specimens was determined as 16.3 ~ 16.8 • 1017 atoms/cm 8 by the ASTM procedure (6) using AIR. The radial distribution of oxygen concentration measured with a 1 X 10 mm infrared beam was uniform overall except at the...

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“…These microdefects act as gettering centers for heavy metals. [6][7][8] It is therefore important to understand their formation mechanisms and to control them.…”

Section: Introductionmentioning

confidence: 99%

The variation of microstructure in Czochralski silicon induced by low-high two step anneal

Kung

Liu

Hsu

et al. 1998

Journal of Applied Physics

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Systematic low-high two-step and high-low-high three-step annealing studies were conducted to investigate the microdefects generated in Czochralski silicon wafers. It was found that cluster precipitates entangled with dislocations are annihilated during extended low temperature anneal. A model involving the recombination of vacancies with interstitials is proposed to explain this phenomenon. (C) 1998 American Institute of Physics

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Thermally Induced Defect Behavior and Effective Intrinsic Gettering Sink in Silicon Wafers

Cited by 59 publications

References 5 publications

Defects in annealed 1.5 MeV boron implanted p-type silicon

Defects in annealed 1.5 MeV boron implanted p-type silicon

Multistep Repeated Annealing for CZ‐Silicon Wafers: Oxygen and Induced Defect Behavior

The variation of microstructure in Czochralski silicon induced by low-high two step anneal

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