Thermally induced microstructural changes and its influence on electrical conductivity of a polymer‐based bakelite RPC detector material: A positron lifetime study

Veedu, Aneesh Kumar Kottaran; Basavaraju, Ravikumar Harijan; Ranganathaiah, Chikkakuntappa

doi:10.1002/app.39234

“…This suggests that material was transformed from a relatively stable form into another form, and that the transformation is either not kinetically driven or has a high activation energy. Heating of bakelite-type polymers to temperatures of approximately 200°C leads to weight loss, which is probably due to depolymerization via methylene bridge loss, 45 and results in the creation of dangling bonds. 46 Thus, the shift in the spectrum suggests that while the film did not spontaneously decompose, a rather slow, systematic depolymerization resulted in polar groups being able to move more freely.…”

Section: Thermal Stability Of the Bakelite-polymer Based Low-k Materialsmentioning

confidence: 99%

Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

Sunday

¹

,

Montgomery²,

Amoah³

et al. 2017

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In this paper, we discuss the use of broadband microwaves (MW) to characterize the thermal stability of organic and hybrid silicon-organic thin films meant for insulation applications in micro-and nanoelectronic devices. We take advantage of MW propagation characteristics to extract and examine the relationships between electrical properties and the chemistry of prototypical low-k materials. The impact of thermal anneal at modest temperatures is examined to shed light on the thermal-induced performance and reliability changes within the dielectric films. These changes are then correlated with the chemical changes in the films, and could provide basis for rational selection of organic dielectrics for integrated devices.Semiconductor manufacturers have been shrinking transistor size in integrated circuits (IC) to improve chip performance and energy efficiency. Consequently, interconnect delay has become a bottle neck for advanced very-large-scale integration (VLSI) systems, and new materials are needed for technology nodes beyond 22 nm to address this problem. 1 The introduction of emerging materials comes with a myriad of reliability issues arising primarily from the thermomechanical properties of the new materials. In contrast with conventional silicon oxides, low-and ultra-low dielectric constant (i.e., low-k and ULK) materials, with tunable dielectric constants, tend to have decreased thermal performance and diminished mechanical properties. [2][3][4] Due to the differences in the thermal, chemical and mechanical properties of these materials, stress can build up within the integrated systems that use these new materials, and may cause mechanical damage. The low-k dielectric materials have different coefficients of thermal expansion from the metals they clad, which leads to the formation of strong local tensile stresses and thermal issues, particularly if the device is thermally cycled in the broad processing temperature range of 25°C to 450°C. With many of the emerging dielectric materials, repeated thermal cycling results in molecular and structural changes, such that the lowest-lying dielectric layer may not have the same properties as the back-end-of line dielectrics of the same composition which have beenThis is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http:// creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. * Electrochemical Society Member. z yaw.obeng@nist.gov Author ManuscriptAccepted for publication in a peer-reviewed journal National Institute of Standards and Technology • U.S. Department of CommercePublished in final edited form as: ECS J Solid State Sci Technol. 2017 ; 6(9): N155-N162. doi:10.1149/2.0141709jss. NIST Author ManuscriptNIST Author Manuscript NIST Author Manuscript exposed to fewer thermal cycles. These material changes can have significant impact on the performance and reliability of the integrated system because the ...

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“…Heating of bakelite-type polymers to temperatures of approximately 200°C leads to weight loss, which is probably due to depolymerization via methylene bridge loss, 45 and results in the creation of dangling bonds. 46 Thus, the shift in the spectrum suggests that while the film did not spontaneously decompose, a rather slow, systematic depolymerization resulted in polar groups being able to move more freely.…”

Section: Thermal Stability Of the Bakelite-polymer Based Low-k Materialsmentioning

confidence: 99%

Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

Sunday,

Montgomery,

Amoah

et al. 2017

Meet. Abstr.

0

View full text Add to dashboard Cite

In this paper, we discuss the use of broadband microwaves (MW) to characterize the thermal stability of organic and hybrid silicon-organic thin films meant for insulation applications in micro-and nanoelectronic devices. We take advantage of MW propagation characteristics to extract and examine the relationships between electrical properties and the chemistry of prototypical low-k materials. The impact of thermal anneal at modest temperatures is examined to shed light on the thermal-induced performance and reliability changes within the dielectric films. These changes are then correlated with the chemical changes in the films, and could provide basis for rational selection of organic dielectrics for integrated devices.Semiconductor manufacturers have been shrinking transistor size in integrated circuits (IC) to improve chip performance and energy efficiency. Consequently, interconnect delay has become a bottle neck for advanced very-large-scale integration (VLSI) systems, and new materials are needed for technology nodes beyond 22 nm to address this problem. 1 The introduction of emerging materials comes with a myriad of reliability issues arising primarily from the thermomechanical properties of the new materials. In contrast with conventional silicon oxides, low-and ultra-low dielectric constant (i.e., low-k and ULK) materials, with tunable dielectric constants, tend to have decreased thermal performance and diminished mechanical properties. [2][3][4] Due to the differences in the thermal, chemical and mechanical properties of these materials, stress can build up within the integrated systems that use these new materials, and may cause mechanical damage. The low-k dielectric materials have different coefficients of thermal expansion from the metals they clad, which leads to the formation of strong local tensile stresses and thermal issues, particularly if the device is thermally cycled in the broad processing temperature range of 25°C to 450°C. With many of the emerging dielectric materials, repeated thermal cycling results in molecular and structural changes, such that the lowest-lying dielectric layer may not have the same properties as the back-end-of line dielectrics of the same composition which have beenThis is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http:// creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. * Electrochemical Society Member. z yaw.obeng@nist.gov

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“…Compared with photochromic and fluorescent spectroscopy and small‐angle diffractions, PALS is capable to probe the properties of free volume holes in polymer blends directly . In recent years, PALS has gained significant importance for examining the free volume information and their relative number density in polymer blends . PALS is an effective tool to investigate the interfacial compatibility and free volume of polymer blends .…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, PALS has gained significant importance for examining the free volume information and their relative number density in polymer blends . PALS is an effective tool to investigate the interfacial compatibility and free volume of polymer blends . The aim of this work is to study the interfacial compatibility, free volume information, and phase morphologies of PLA/PU blends, and the connections among the different testing results were established.…”

Section: Introductionmentioning

confidence: 99%

Interfacial compatibility of super‐tough poly(lactic acid)/polyurethane blends investigated by positron annihilation lifetime spectroscopy

Zhao

¹

,

Yu

²

,

Chen

³

et al. 2018

J of Applied Polymer Sci

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Supertough polylactide (PLA)/polyurethane (PU) blends were prepared by reactive blending of PLA with polyester polyol and toluene‐2,4‐diisocyanate. The free volume and interfacial compatibility between the two polymers were investigated by positron annihilation lifetime spectroscopy. The PU particles dispersed homogeneously in the PLA matrix and self‐assembled into a subinclusion microstructure, resulting in fibrils and significant plastic deformation occurs during impact process. More phase interface and free volume cavities formed between PLA and PU boundary because of a good interfacial compatibility between the two polymers, leading to smaller sizes of free volume cavities, and the increasing of the number of these cavities. Therefore, the toughness of PLA was greatly improved by blending PU. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2018, 135, 46596.

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Thermally induced microstructural changes and its influence on electrical conductivity of a polymer‐based bakelite RPC detector material: A positron lifetime study

Cited by 18 publications

References 29 publications

Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

Interfacial compatibility of super‐tough poly(lactic acid)/polyurethane blends investigated by positron annihilation lifetime spectroscopy

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