Thermally stable near-infrared emission from a double perovskite K2LiScF6:Cr3+ phosphor for light-emitting diodes

Yang, Tao; Chu, Lingxiang; Zhang, Ting; Qu, Yi; Zhou, Qiang; Wan, Jing; Wu, Mei‐Hwan

doi:10.1016/j.jallcom.2023.171336

Cited by 13 publications

(1 citation statement)

References 41 publications

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“…The transition metal ion Cr 3+ , with an outer electron configuration of 3d 3 , has its d electron energy levels split by the crystal field, which closely ties its luminescence characteristics to the surrounding crystal field environment. 19,20 Hence, the FWHM and peak position of the emission spectrum can be adjusted by modifying the environment around Cr 3+ .…”

Section: Introductionmentioning

confidence: 99%

Enhanced NIR optical properties of a single-site-occupied ultra-broadband InNbTiO₆:Cr³⁺ phosphor at 965 nm through Ga³⁺ doping

Xing,

Wang,

et al. 2024

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

Enhanced NIR optical properties of a single-site-occupied ultra-broadband InNbTiO₆:Cr³⁺ phosphor at 965 nm through Ga³⁺ doping

Xing,

Wang,

et al. 2024

J. Mater. Chem. C

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Trivalent Rare Earth Ion‐Doped Metal Halide Perovskite Near‐Infrared Semiconductors for High‐Performance Optoelectronic Devices

Yang,

Wang,

Liao

2024

Adv Funct Materials

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Given the extensive application of near‐infrared (NIR) emission, the quest for efficient and versatile NIR semiconductors have attracted tremendous attention. Leveraging trivalent rare earth (RE3+) ions doping, the integration of metal halide perovskites with RE3+ ions makes it easy to achieve NIR‐II emission (1000–1700 nm). However, although showing promise in bioimaging, optical communication, and night vision, enhancing NIR‐II emission intensity to promote further progress in real‐world applications remains a challenge. This review summarizes the recent advancements in RE3+ ion‐doped perovskite NIR semiconductors, and discusses what kind of properties are needed and how to achieve desired optical properties in various applications. The review starts with the synthesis methods for various material types with rich examples. Following this, the mechanisms of strategies for optimizing NIR luminescence performance are discussed in detail. Furthermore, the review highlights their multifunctional applications both as an electrically driven emitter in NIR light‐emitting diodes (LEDs) and as a down‐conversion emitter in photovoltaic devices (PVs) or phosphor‐converted LEDs (pc‐LEDs). Finally, insights on how to fill the gap between current research and future goals are provided. This review aims to provide a deeper understanding of RE3+ ion‐doped NIR light‐emitting perovskite materials, and to promote the exploration of efficient NIR emitters.

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High Output Power and High Quantum Efficiency in Novel NIR Phosphor MgAlGa_0.7B_0.3O₄:Cr³⁺ with Profound FWHM Variation

Zhong,

Xu,

et al. 2023

Advanced Materials

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There is strong demand for ultraefficient near‐infrared (NIR) phosphors with adjustable emission properties for next‐generation intelligent NIR light sources. Designing phosphors with large full‐width at half‐maximum (FWHM) variations is challenging. In this study, novel near‐ultraviolet light‐emitting diode (LED)‐excited NIR phosphors, MgAlGa0.7B0.3O4:Cr3+ (MAGBO:Cr3+), with three emission centers achieve ultra‐narrowband (FWHM = 29 nm) to ultra‐broadband (FWHM = 260 nm) emission with increasing Cr3+ concentration. Gaussian fitting and decay time analysis reveal the alteration in the FWHM, which is attributed to the energy transfer occurring between the three emission centers. The distinct thermal quenching behaviors of the three emission centers are revealed through the temperature‐dependent decay times. The ultra‐broadband NIR phosphor MAGBO:0.05Cr3+ exhibits high thermal stability (85%, 425 K) and exceptional external quantum efficiency of 68.5%. An NIR phosphor‐converted LED (pc‐LED) is fabricated using MAGBO:0.05Cr3+ phosphor, exhibiting a remarkable NIR output power of 136 mW at 600 mA in ultra‐broadband NIR pc‐LEDs. This study describes the preparation of highly efficient phosphors and provides a further understanding of the tunable FWHM, which is vital for high‐performance NIR phosphors with versatile applications.

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Thermally stable near-infrared emission from a double perovskite K2LiScF6:Cr3+ phosphor for light-emitting diodes

Cited by 13 publications

References 41 publications

Enhanced NIR optical properties of a single-site-occupied ultra-broadband InNbTiO₆:Cr³⁺ phosphor at 965 nm through Ga³⁺ doping

Enhanced NIR optical properties of a single-site-occupied ultra-broadband InNbTiO₆:Cr³⁺ phosphor at 965 nm through Ga³⁺ doping

Trivalent Rare Earth Ion‐Doped Metal Halide Perovskite Near‐Infrared Semiconductors for High‐Performance Optoelectronic Devices

High Output Power and High Quantum Efficiency in Novel NIR Phosphor MgAlGa_0.7B_0.3O₄:Cr³⁺ with Profound FWHM Variation

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Thermally stable near-infrared emission from a double perovskite K2LiScF6:Cr3+ phosphor for light-emitting diodes

Cited by 13 publications

References 41 publications

Enhanced NIR optical properties of a single-site-occupied ultra-broadband InNbTiO6:Cr3+ phosphor at 965 nm through Ga3+ doping

Enhanced NIR optical properties of a single-site-occupied ultra-broadband InNbTiO6:Cr3+ phosphor at 965 nm through Ga3+ doping

Trivalent Rare Earth Ion‐Doped Metal Halide Perovskite Near‐Infrared Semiconductors for High‐Performance Optoelectronic Devices

High Output Power and High Quantum Efficiency in Novel NIR Phosphor MgAlGa0.7B0.3O4:Cr3+ with Profound FWHM Variation

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Enhanced NIR optical properties of a single-site-occupied ultra-broadband InNbTiO₆:Cr³⁺ phosphor at 965 nm through Ga³⁺ doping

Enhanced NIR optical properties of a single-site-occupied ultra-broadband InNbTiO₆:Cr³⁺ phosphor at 965 nm through Ga³⁺ doping

High Output Power and High Quantum Efficiency in Novel NIR Phosphor MgAlGa_0.7B_0.3O₄:Cr³⁺ with Profound FWHM Variation