Thermally Stimulated Conductivity and Luminescence in Polycrystalline Diamond Films

Gheeraert, Etienne; Deneuville, A.; Gonon, P.; Benabdesselam, M.; Iacconi, P.

doi:10.1002/(sici)1521-396x(199903)172:1<183::aid-pssa183>3.3.co;2-i

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…Similar evidence has been reported in Ref. 34, where a peak at 450 K with a corresponding cross section of Ϸ10 Ϫ19 cm 2 was observed by TSC with ␤ϭ0.2 K/s. Vittone et al 29 found by TL analysis ͑␤ϭ8 K/s͒ evidence for at least two deep levels in the range E t ϭ0.98-1.12 eV, Ϸ10 Ϫ18 -10 Ϫ19 cm 2 .…”

Section: A Deep Level Contentsupporting

confidence: 90%

“…29 In the many studies found in the literature, one or more of these thermal spectroscopy techniques has been used in the investigation of boron-doped CVD diamond, [30][31][32] and undoped CVD diamond. 18,[25][26][27][28][29][30][31][32][33][34][35][36][37] In some of these works, the capture cross section has been calculated explicitly, while in other cases it can be deduced either from the activation energy and the glow curve peak position, or from the TL frequency factor s. However, in general, values of deduced solely from a single experimental technique have a large systematic uncertainty, because spectra are composed of many overlapping deep level contributions, and thus can be explained by different sets of pairs of parameters (E t ,).…”

Section: Introductionmentioning

confidence: 99%

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Deep levels and trapping mechanisms in chemical vapor deposited diamond

Bruzzi

Menichelli

Sciortino

et al. 2002

Journal of Applied Physics

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Detector-grade undoped chemical vapor deposited ͑CVD͒ diamond samples have been studied with thermally stimulated currents ͑TSC͒ and photoinduced current transient spectroscopy ͑PICTS͒ analyses in the temperature range 300-650 K. Two previously unknown defects have been identified, characterized by activation energies E 1 ϭ1.14 eV and E 2 ϭ1.23 eV, cross sections of about Ϸ10 Ϫ13 cm 2 and concentrations of N t Ϸ10 16 cm Ϫ3. They have been clearly observed by PICTS and isolated in TSC measurements by use of a fractional annealing cycle in the temperature range 300-400 K. Due to their trap parameters, in particular the high cross section, the levels corresponding to E 1 and E 2 are characterized by capture times of the order of 10-100 ps. A dominant TSC peak observed at Ϸ500 K has been also investigated and has been resolved into four components with activation energies of the order of 1 eV and cross sections in the range 10 Ϫ19-10 Ϫ17 cm 2. Three of these levels exhibit a fast capture rate ͑0.1-10 ns͒ in spite of their small cross sections, due to their high concentration in the investigated sample. Correlating our results with room temperature charge collection studies, we propose that the observed traps with their fast capture rates can be effective in limiting the carrier lifetimes and, consequently, the charge collection efficiency of CVD diamond particle detectors

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Section: A Deep Level Contentsupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Deep levels and trapping mechanisms in chemical vapor deposited diamond

Bruzzi

Menichelli

Sciortino

et al. 2002

Journal of Applied Physics

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“…Diamond in the form of CVD films possess extraordinary properties: high radiation resistance, tissue equivalency, chemically stability and non-toxicity, that may place diamond as perhaps the most promising TLD/OSLD material of the future. Although, the TL performance of CVD diamond are quite well investigated for α, β, γ and even protons [3 -6] as well as UV radiation [7][8][9] with great expectative in medical applications [10], that is not the case for OSL. Since boron is known to improve the TL efficiency of CVD diamond film as compared to non doped diamond, it was expected to find an enhanced OSL intensity output in B/C-doped CVD diamond.…”

Section: Introductionmentioning

confidence: 99%

Optically stimulated luminescence dosimetry on CVD diamond films

Barboza-Flores

Meléndrez

Gonçalves

et al. 2004

phys. stat. sol. (a)

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Diamond thin films chemically vapor deposited containing different B/C concentration in the range of 2000 -20 000 ppm were exposed to a β-ray dose of 0.8 -3000 Gy. The optically stimulated luminescence (OSL) response of previously irradiated samples was excited with light of 470 nm at room temperature. The OSL decay curves were measured and found them to be a function of the dose exposure. The remaining thermoluminescence (TL) glow curve after optical stimulation indicates the existence of main charge carriers trapped in traps located at 323 -523 K, meaning that the OSL emission appears to originate from charge trapped mainly at those traps related to the low temperature TL glow peaks. The results indicate that CVD diamond films perform well as OSL dosimeter for ionizing radiation.

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The role of charge trapping at grain boundaries on charge transport in polycrystalline chemical vapor deposited diamond based detectors

Hearne

Trajkov

Jamieson

et al. 2006

Journal of Applied Physics

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We report a detailed investigation of the trapping and release of charge carriers from grain boundaries in polycrystalline diamond grown by chemical vapor deposition (poly-CVD). A model for charge trapping and release is presented for samples which display very different bulk characteristics as determined by photoluminescence, dark conductivity, and thermally stimulated current measurements. Experimental studies were performed as a function of temperature and applied electric field using ion beam induced charge to map the charge collection efficiency of charge induced by a scanned, focused, 2MeV He+ microprobe. Even though the carrier velocity and charge collection efficiency should begin to saturate at electric fields above 1×104V∕cm, the efficiency was found to increase by a factor of 3 when the electric field is increased to greater than 1×105V∕cm. A model based on the localized enhancement of the electric field caused by trapped charge at grain boundaries is found to account for this unexpected result. Further, we find that this localized variation in electric field strongly affects charge transport in poly-CVD diamond and is therefore an important consideration for optimizing detector performance.

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Thermally Stimulated Conductivity and Luminescence in Polycrystalline Diamond Films

Cited by 3 publications

References 3 publications

Deep levels and trapping mechanisms in chemical vapor deposited diamond

Deep levels and trapping mechanisms in chemical vapor deposited diamond

Optically stimulated luminescence dosimetry on CVD diamond films

The role of charge trapping at grain boundaries on charge transport in polycrystalline chemical vapor deposited diamond based detectors

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