Thermally stimulated current observation of trapping centers in an undoped Tl4Ga3InSe8 layered single crystal

Abstract

Thermally stimulated current measurements are carried out on as-grown Tl 4 Ga 3 InSe 8 layered single crystal in the temperature range 10-160 K with different heating rates. Experimental evidence is found for two shallow trapping centers in Tl 4 Ga 3 InSe 8 . They are located at 17 and 27 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.