Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates

Fang, Zhijia; Claflin, B.; Polenta, L.; Mitchel, W. C.

doi:10.1007/s11664-005-0106-5

Cited by 30 publications

(24 citation statements)

References 12 publications

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“…13,14 Such an assignment complies with TSC studies of SI 4H-SiC (Ref. 10) where Al related trap with E a ¼ 0.22 eV was peaked at 105 K. We have tentatively assigned peak C at $242 K (E a ¼ 0.57 eV) to the Z 1/2 center. 10,13,14 Although the reported activation energy of Z 1/2 center (0.63-0.68 eV) and the typical peak temperature are somewhat higher than that for peak C, this is the only electron trap candidate for this peak that we were able to find in the published literature.…”

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confidence: 87%

Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer

Muzykov

Krishna

Mandal

2012

Applied Physics Letters

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We have investigated temperature dependence (94 K–650 K) of current conduction in semi-insulating 4H-SiC epitaxial layer. The epitaxial layer was grown on highly doped n-type (0001) 4H-SiC substrate using chemical vapor deposition with dichlorosilane precursor. The current—voltage (I-V) characteristics exhibited steps at ∼1 V and ∼70 V that were attributed to the filling of deep level centers by injected electrons. Correlation of the I-V characteristics with the results of thermally stimulated current measurements showed that deep centers peaked at 242 K, 285 K, and 500 K, were responsible for the steps in the I-V characteristics. Slow processes of the injected carrier capture on traps resulted in the I-V characteristic with negative differential resistance.

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confidence: 87%

Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer

Muzykov

Krishna

Mandal

2012

Applied Physics Letters

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“…TSC is useful for identifying compensated traps and other defect levels in semi-insulating material. 14 The ionized traps are filled at low temperature by white light illumination then emptied by a temperature scan in the dark during which variations in the current indicate the presence of traps. The TSC temperature scan for the semi-insulating sample is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

Mitchel¹,

Mitchell²,

Fang³

et al. 2006

Journal of Applied Physics

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Temperature dependent Hall effect ͑TDH͒, low temperature photoluminescence ͑LTPL͒, secondary ion mass spectrometry ͑SIMS͒, optical admittance spectroscopy ͑OAS͒, and thermally stimulated current ͑TSC͒ measurements have been made on 6H-SiC grown by the physical vapor transport technique without intentional doping. n-and p-type as well semi-insulating samples were studied to explore the compensation mechanism in semi-insulating high purity SiC. Nitrogen and boron were found from TDH and SIMS measurements to be the dominant impurities that must be compensated to produce semi-insulating properties. The electrical activation energy of the semi-insulating sample determined from the dependence of the resistivity was 1.0 eV. LTPL lines near 1.00 and 1.34 eV, identified with the defects designated as UD-1 and UD-3, were observed in all three samples but the intensity of the UD-1 line was almost a factor of 10 more in the n-type sample than in the the p-type sample with that in the semi-insulating sample being intermediate between those two. OAS and TSC experiments confirmed the high purity of this material. The results suggest that the relative concentrations of a dominant deep level and nitrogen and boron impurities can explain the electrical properties in this material.

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“…3(a)) can be attributed to the well known boron related D-center. 12,18,21 The TSC measurements at 0 V bias revealed one more trap center peaked at $400 K (peak 7 in Fig. 3(b)).…”

Section: Resultsmentioning

confidence: 98%

“…This trap center has a peak temperature of $140 K and had an activation energy close to that reported for shallow boron. 12 However, its independence on the bias voltage suggests that this peak represents the trap center at the Ni/SiC interface. The weak peak 4 at $175 K can be caused by the HS1, D I , and HH1 centers 12,19,20 with an activation energy of $0.35 eV.…”

Section: Resultsmentioning

confidence: 99%

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Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy

Muzykov

Krishna

Mandal

2012

Journal of Applied Physics

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We have investigated deep level centers in n-type and semi-insulating (SI) 4H-SiC epitaxial layers by thermally stimulated current (TSC) spectroscopy. The epitaxial layers were grown using chemical vapor deposition utilizing a dichlorosilane precursor. Both epitaxial layers exhibited relatively shallow levels related to Al, B, L- and D-centers. A deep level center with an activation energy of 1.1 eV, peaked at ∼400 K, was detected in the n-type epitaxial layer and correlated with the IL2 level and the 1.1 eV center in a high purity bulk SI 4H-SiC. The TSC spectra of the SI epitaxial layer was dominated by the peaks at 525–585 K that we attributed to intrinsic defects and their complexes with energy levels close to the middle of the bandgap. The TSC spectra of SI epitaxial layer exhibited peaks with different current polarity which is explained by thermoelectric effect and the built-in electric field reversal. The results of the transfer length method measurements of the SI epitaxial layer and the room temperature current-voltage (I-V) characteristics of both epitaxial layers are also reported.

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Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates

Cited by 30 publications

References 12 publications

Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer

Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer

Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy

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