Thermally stimulated luminescence of dosimetric α-Al2O3 crystals

Кортов, В. С.; Milman, I. I.

doi:10.1007/bf02436155

Cited by 3 publications

(1 citation statement)

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“…Defect states between E I and E I − 1.8 eV are shown schematically but are not detected experimentally because of the cut-off of the photomultiplier at low energies. 26,29 Two sets of energy levels are involved, as shown in Fig. The 1A → 2B transition, 6.1 eV, results in photoconductivity; it is taken as the transition from a deep center to E C .…”

Section: B Al 2 O 3 Luminescencementioning

confidence: 99%

Voltage-controlled negative resistance and electroluminescent spectra of Al–Al2O3–Au diodes

Hickmott

2009

Journal of Applied Physics

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Dielectric breakdown of metal-insulator-metal ͑MIM͒ diodes can result in the development of voltage-controlled negative resistance ͑VCNR͒ in the current-voltage ͑I-V͒ characteristics. Electroluminescence from the MIM diode appears at the same time as VCNR develops. The spectra of electroluminescence associated with VCNR of Al-Al 2 O 3 -Au diodes with anodic Al 2 O 3 has been measured for photon energies between 1.8 eV, the lowest photon energy the photomultiplier can detect, and 3.4 eV, using narrow-band interference filters. Electroluminescent photons have maximum intensity between 1.8 and 2.4 eV with a peak at ϳ2.2 eV. The voltage threshold for electroluminescence in Al-Al 2 O 3 -Au diodes, V TH , is 1.7 to 2.0 V; it is associated with an impurity band in amorphous Al 2 O 3 . Electrons injected into the impurity band can recombine with radiative centers in Al 2 O 3 or can be emitted into vacuum. The range of values of V TH is the same as the range of values of the barrier height at the Al-Al 2 O 3 interface measured by internal photo emission or by tunneling. The spectral data support a model of conduction and VCNR in a conducting channel. Dielectric breakdown and forming of VCNR introduce positive charge at the Al-Al 2 O 3 interface that results in an Ohmic contact and a high field region in the conducting channel. Electrons injected into Al 2 O 3 when the applied voltage is greater than V TH neutralize positive charge, change the Ohmic contact, and cause a decrease in current with increasing voltage. The radiative centers involved in electroluminescence are also responsible for other forms of luminescence in Al 2 O 3 .

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Section: B Al 2 O 3 Luminescencementioning

confidence: 99%