Thermionic field emission in GaN nanoFET Schottky barriers

Xie, Kun; Hartz, Steven Allen; Ayres, Virginia M.; Jacobs, Benjamin W.; Ronningen, R. M.; Zeller, A. F.; Baumann, T.; Tupta, Mary Anne

doi:10.1088/2053-1591/2/1/015003

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…In order to describe the experimental reverse characteristics I-V of SiC SBDs, several authors used the general model [6] of the tunneling current with [7][8][9][10][11] and without [5] the inclusion of the image force barrier lowering (IFBL). However, several authors [12][13][14][15][16][17] showed that the thermionic field emission (TFE) theory developed by Padovani-Stratton [18] can be used to describe the experimental reverse characteristics of SiC and other wide bandgap SBDs with and without the IFBL. Ivanov et al [19,20] and Lee et al [21] concluded that the thermionic emission model combined with the barrier lowering model is appropriate to describe the reverse characteristics I-V.…”

Section: Introductionmentioning

confidence: 99%

Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Latreche¹

2019

Semicond. Sci. Technol.

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A new numerical method for determining the reverse transition voltage between thermionic and tunneling mechanisms has been performed for 4H-SiC Schottky barrier diodes. The idea of this method is based on equality between thermionic emission and the tunneling process and both are combined with the barrier lowering model. Application of this method shows a strong discrepancy between our results and those deduced from Padovani-Stratton conditions. The reverse transition voltage versus the temperature plot exhibits an unexpected peak at low temperatures which means that the thermionic emission mechanism predominates at low temperatures. The reverse transition voltage increases linearly with the increase in barrier height, the effective mass and the inverse of doping concentration. In order to predict the reverse transition voltage as a function of temperature, doping concentration and barrier height for a 4H-SiC Schottky barrier diode, an analytical model has been proposed.

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Section: Introductionmentioning

confidence: 99%

Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Latreche¹

2019

Semicond. Sci. Technol.

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“…Combined and not combined with barrier lowering model, some authors [6][7][8][9][10][11] described the reverse leakage current using the general model [12] of the tunneling current. At the same time, the others [13][14][15][16][17][18] used the thermionic field emission (TFE) developed by Padovani-Stratton [19] also with and without the effect of the image force barrier lowering. However, some researchers [20][21][22] used thermionic emission model in combination with the barrier lowering one to describe the experimental reverse characteristics data.…”

Section: Introductionmentioning

confidence: 99%

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

Latreche¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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A new method to analyze reverse characteristics of 4H-SiC Schottky barrier diode has been presented in this paper. The model incorporates both the current induced by the tunneling of carriers through the Schottky barrier and that induced by the thermionic emission of carriers across the metal-semiconductor interface. The treatment includes the effect of image force lowering both the thermionic emission and electron tunneling processes. This analysis allowed us to separate and identify the thermionic emission and tunneling components of the total current. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components by using two models; bias dependence and no bias dependence of barrier height. For high temperatures, the experimental reverse transition voltage increases with increasing the temperature and decreases with increasing the doping concentration as predicted by Latreche's model.

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“…This assumption is reasonable, since measurements on Si‐doped InN NWs do not show a significant change in the electrical characteristics (S3, Supporting Information). Under this assumption, the experimental data in the forward bias regime, where the current is no longer dominated by the shunt resistance and not yet by the series resistance, can be modeled by the thermionic emission (TE) theory . In this voltage region, the current density can be described by

j = \underset{j_{normalS}}{true \underset{⏟}{{A^{*}}^{} T^{2} \exp (- \frac{e Φ_{b}}{k T})}} true[\exp true(\frac{e U}{η k T} true) - 1 true]

in which A * is the effective Richardson constant, T the temperature, e the electron charge, k the Boltzmann constant, Ф b the potential barrier height, η the ideality factor, and j S the saturation current density.…”

Section: Iu‐curves Of Inn Nws On Si In the Dark And At Rtmentioning

confidence: 99%

Electrical Characterization of InN Nanowire/Si Heterojunctions

Weiszer

Jörg

Kolhep

et al. 2019

Physica Status Solidi (b)

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This report deals with the electrical properties of a heterojunction between self‐assembled InN nanowires (NWs) grown by plasma‐assisted molecular beam epitaxy and Si (111) with different doping types and concentrations. Multiple NWs are contacted in a vertical sandwich structure and current–voltage (IU) measurements show a rectifying behavior which strongly depends on the doping level of the Si substrate. Comparable results are obtained for single NWs contacted with a conductive atomic force microscope tip. The transport processes can be described by thermionic emission theory of a Schottky diode. However, field emission and recombination can not be neglected, especially for high doping concentrations of the Si substrate. The temperature dependence of the barrier height and the ideality factor have been determined by measuring IU‐curves from 200 K up to 300 K. Furthermore, electrical changes based on aging and on different environmental conditions, like contact with water, are discussed. The underlying band diagram of the InN/Si heterojunction has been simulated with the software package Nextnano++ and is in agreement with the experimental data. The simulations consider both polarities of the InN NWs and both doping types of the Si substrates.

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Thermionic field emission in GaN nanoFET Schottky barriers

Cited by 6 publications

References 17 publications

Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

Electrical Characterization of InN Nanowire/Si Heterojunctions

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