A Cu–Ni-based
alloy with a high power factor is a commercially
utilized metallic thermocouple material. However, the high thermal
conductivity has been a major limitation to achieving thermoelectric
performance in semiconductor materials. Herein, this work presents
a 76.1% reduced thermal conductivity (∼7.7 W m–1 K–1) in Cu70Ni30, which
is one of the lowest reported values in the literature. Such suppression
of thermal conductivity can be attributed to the varied frequency
phonon scattering by the interfacial potential barrier, built from
micron-scale defects formed via sintering melt-spun ribbons. However,
the defects simultaneously reduce the charge carrier concentration,
mobility, and thus the electrical conductivity. The lowest thermal
conductivity leads to the highest zT and ZT
avg in the sample sintered at 673 K under 15
MPa. The values are 0.24 (@573 K) and 0.15 (323–573 K), respectively,
which are 130.3 and 140.0% higher than the values of the pristine
counterpart. Our work demonstrates that improved thermoelectric performance
in Cu–Ni-based alloys can be obtained by creating various interfacial
defects even at micron scales, which paves the way to suppress thermal
conductivity largely in metallic thermoelectric materials via melt-spinning
(MS) and spark plasma sintering (SPS) synthesis.